Electrical properties of hybrid (ferromagnetic metal)—(layered semiconductor) Ni/p–GaSe structures

Bakhtinov, A. P.; Vodop’yanov, V. N.; Kovalyuk, Z. D.; Netyaga, V. V.; Lytvyn, O. S.

doi:10.1134/s1063782610020077

Cited by 8 publications

(17 citation statements)

References 46 publications

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“…2a). The ripples are a result of elastic strain relaxation and plastic deforma tions in the layered crystal's upper layers, which are bound to one another by weak molecular forces [6,9]. After the deposition of Au layers, accompanied by Ni layer heating, AuNi/n Ga 2 O 3 /p GaSe discontinuities can appear on the structure surface (Fig.…”

Section: Surface Morphology Of Hybrid Nanostructuresmentioning

confidence: 99%

“…Carrier transport in grown hybrid structures was analyzed using the impedance spectroscopy method previously used to study the electrical properties of Ni/n Ga 2 Se 3 /p GaSe hybrid structures [6]. This method was efficiently used to analyze the variety of electrical processes that occur in barrier structures with different relaxation times.…”

Section: Electrical Properties Of the Au/ni/〈c〉/n Ga 2 O 3 /P Gase〈knmentioning

confidence: 99%

“…The low surface state density (≤10 10 cm -2 ) on an undeformed GaSe(0001) surface and the roughness, whose root mean square value is ~0.05 nm for this surface [6], has created interest in using this material as a buffer layer when forming barrier hybrid structures on a Si surface [5]. However, the surface chemical reactions that occur when GaSe is in contact with ferromagnetic metals (Fe [5], Ni [6]) limit the pos sibility of efficient spin injection in (ferromagnetic metal)/(semiconductor surface) hybrid structures fab ricated on the basis of this crystal. On a GaSe (0001) surface, thin (nanoscale) layers of Ga 2 O 3 thermal oxide [7] and natural oxide which is a mixture of Ga 2 O 3 and wide gap Ga and Se oxides can be grown [8,9].…”

Section: Introductionmentioning

confidence: 99%

“…Thin layers of this material with an atomically smooth surface can be grown using molecular electron beam epitaxy (Van der Waals epitaxy) on a silicon (111) sur face for the "electronic passivation" of this surface [5]. The low surface state density (≤10 10 cm -2 ) on an undeformed GaSe(0001) surface and the roughness, whose root mean square value is ~0.05 nm for this surface [6], has created interest in using this material as a buffer layer when forming barrier hybrid structures on a Si surface [5]. However, the surface chemical reactions that occur when GaSe is in contact with ferromagnetic metals (Fe [5], Ni [6]) limit the pos sibility of efficient spin injection in (ferromagnetic metal)/(semiconductor surface) hybrid structures fab ricated on the basis of this crystal.…”

Section: Introductionmentioning

confidence: 99%

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Surface morphology and electrical properties of Au/Ni/〈C〉/n-Ga2O3/p-GaSe〈KNO3〉 hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions

et al. 2012

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Features of the formation of Au/Ni/〈C〉/n Ga 2 O 3 hybrid nanostructures on a Van der Waals sur face (0001) of "layered semiconductor-ferroelectric" composite nanostructures (p GaSe〈KNO 3 〉) are stud ied using atomic force microscopy. The room temperature current-voltage characteristics and the depen dence of the impedance spectrum of hybrid structures on a bias voltage are studied. The current-voltage characteristic includes a resonance peak and a portion with negative differential resistance. The current attains a maximum at a certain bias voltage, when electric polarization switching in nanoscale three dimen sional inclusions in the layered GaSe matrix occurs. In the high frequency region (f > 10 6 Hz), inductive type impedance (a large negative capacitance of structures, ~10 6 F/mm 2 ) is detected. This effect is due to spin polarized electron transport in a series of interconnected semiconductor composite nanostructures with mul tiple p GaSe〈KNO 3 〉 quantum wells and a forward biased "ferromagnetic metal-semiconductor" polarizer (Au/Ni/〈C〉/n + Ga 2 O 3 /n Ga 2 O 3 ). A shift of the maximum (current hysteresis) is detected in the currentvoltage characteristics for various directions of the variations in bias voltage.

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Section: Surface Morphology Of Hybrid Nanostructuresmentioning

confidence: 99%

Section: Electrical Properties Of the Au/ni/〈c〉/n Ga 2 O 3 /P Gase〈knmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Surface morphology and electrical properties of Au/Ni/〈C〉/n-Ga2O3/p-GaSe〈KNO3〉 hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions

et al. 2012

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“…ФОÒОÊОНÄЕНСАÒОР НА ОСНОВЕ НАНОÊОМПОЗИÒА n-InSe<RbNO 3 > Изâåñòíыå â íàшå âðåмÿ ãèбðèдíыå ñòðóê-òóðы [1], â êîòîðыõ èñïîëьзóåòñÿ âîзмîжíîñòь ãåíåðàцèè íåðàâíîâåñíыõ фîòîíîñèòåëåé â ïî-ëóïðîâîдíèêå дëÿ зàðÿдêè дâîéíîãî ýëåêòðèчå-ñêîãî ñëîÿ íà ãðàíèцå мåждó ïîëóïðîâîдíèêîм è èîííым ïðîâîдíèêîм, ñîздàíы íà îñíîâå êîí-òàêòà òâåðдîòåëьíîãî ñëîèñòîãî ïîëóïðîâîдíè-êà ñ жèдêèм ýëåêòðîëèòîм [2-4] èëè ñ òâåðдîé èîííîé ñîëью [5]. Пðîцåññы, êîòîðыå ïðîèñõî-дÿò â íèõ ïðè îñâåщåíèè, îбóñëîâëåíы ïðîòå-êàíèåм òîêà â жèдêîм ýëåêòðîëèòå è â ïîëóïðî-âîдíèêå.…”

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Photocapacitor based on nanocomposite n-InSe <RbNO3>

et al. 2018

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The n-InSe<RbNO3> nanocomposite material was obtained by the method of intercalation of the InSe layered single crystal from a melt of RbNO3 ferroelectric salt, which can be used for the production of a high-specific capacitance photoconductor. X-ray analysis of the structure, AFM-imaging of the surface and measurement of dielectric frequency characteristics of the samples were carried out. It was found that the intercalated InSe<RbNO3> samples keeps the type of monocrystalline structure, and the spectrum of X-ray diffraction pattern indicates the implantation of the intercalant in the van der Waals gaps of layered InSe single crystal with an increase in the parameters of the crystal lattice. AFM images of the surface of nanocomposite material layers show the RbNO3 islands in the form of nanosized rings. The islands' height does not exceed the width of van der Waals gap for InSe, which is ≈ 0,35 nm, and the average outside diameter of the rings is ≈ 50 nm. The ensemble of nanorings is characterized by a high surface density in (0001) plane of the crystal layers (109—1010 cm–2). Thus, the physical phenomena of self-organization of nanostructures with ionic conductivity on the surfaces of layers with a molecular type of bond are used in the making of nanocomposite material for the proposed photoconductor. This allows us to obtain arrays of nanosized 2D inclusions with ionic conductivity and with given geometrical sizes, morphology and spatial distribution in a matrix of a layered crystal. The developed photoconductor has a high specific electrical capacity, a high coefficient of overlapping of the capacity (≈ 109) in the light, has the ability to accumulate electric charge, it can be used as a low-voltage semiconductor device in optoelectronic memory systems, in photoelectric sensors, in light energy converter and in the storage of electric energy.

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Controlled synthesis and characterization of highly ordered core–shell nickel–carbon nanoparticle arrays on the van der Waals surfaces of layered semiconductor crystals

Bakhtinov

Vodopyanov

Kudrynskyi

et al. 2013

Physica Status Solidi (a)

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Self‐assembled core–shell Ni–C nanoparticles (NPs) with nearly uniform sizes were grown on the van der Waals (0001) surfaces of GaSe layered crystals. The metal NPs encapsulated within graphite shells (Ni@C) with the sizes ranging from a few to 15 nm were produced by electron beam induced vacuum deposition from metal‐carbon melts under UV‐irradiation without annealing after the deposition. The samples were characterized by X‐ray diffraction, atomic force microscopy, X‐ray photoelectron spectroscopy, Raman spectroscopy. The van der Waals interactions between the NPs and the surface electrostatic interactions are utilized for encapsulated NPs self‐assembly. The Coulomb staircases and the negative differential conductance were observed at temperatures lower than 300 K in the current–voltage (I–V) curves of the vertical hybrid structures Au/Ni/(Ni–C)/Ni@CNCs/n‐Ga2O3/p‐GaSe/In consisting of ferromagnetic metal Ni, (Ni–C) nanocomposite thin film and two layers of magnetic NPs (Ni@CNCs), which were embedded in n‐Ga2O3 wide‐band‐gap oxide. The I–V characteristics of this structure depend on orientation of the external weak (∼60 mT) magnetic field relative to the (0001) GaSe plane. Peculiarities observed in the I–V characteristics of the hybrid structures may be caused by magnetic‐field‐dependent phenomena of spin‐dependent tunneling through the barriers, which gives rise to spin accumulation, and spin‐polarized electric current interactions with magnetic NPs.

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Electrical properties of hybrid (ferromagnetic metal)—(layered semiconductor) Ni/p–GaSe structures

Cited by 8 publications

References 46 publications

Surface morphology and electrical properties of Au/Ni/〈C〉/n-Ga2O3/p-GaSe〈KNO3〉 hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions

Surface morphology and electrical properties of Au/Ni/〈C〉/n-Ga2O3/p-GaSe〈KNO3〉 hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusions

Photocapacitor based on nanocomposite n-InSe <RbNO3>

Controlled synthesis and characterization of highly ordered core–shell nickel–carbon nanoparticle arrays on the van der Waals surfaces of layered semiconductor crystals

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