Fundamentals of Junctionless Field‐Effect Transistors

Sahay, Shubham; Kumar, M. Jagadesh

doi:10.1002/9781119523543.ch3

Cited by 5 publications

(1 citation statement)

References 166 publications

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“…The most prominent challenge in fabricating short-channel devices is forming source/channel and channel/drain junctions in typical MOSFETs [3]. Several advantageous qualities of junctionless MOSFETs include the absence of sharp junctions, which are challenging to create, a streamlined fabrication technique, and others [4]. Field effect transistor-based electrochemical biosensors have garnered the most attention in the research community because they have numerous bene ts over other biosensors, including compatibility with CMOS, label-free detection, increased scaling, and inexpensive production costs.…”

Section: Introductionmentioning

confidence: 99%

Gate Engineered Ferroelectric Junctionless BioFET for Label-Free Detection of Biomolecules

Yadav

Rewari

Pandey

2023

Preprint

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A Gate Engineered Ferroelectric Junctionless BioFET is proposed and investigated for label-free detection of various biomolecules. A nanocavity is created by etching a part of the gate oxide material on the top and bottom of the device, which allows biomolecules to get immobilized. The immobilization of biomolecules in the cavity causes changes in electrostatic characteristics such as surface potential, input and output characteristics, transconductance, output conductance, gate capacitance, and cut-off frequency used as sensing metrics. The biosensor is also examined at different biomolecule concentrations, such as -1e12, 0, and 1e12. The transistor's sensitivity is then understood by looking at the fluctuation in threshold voltage, subthreshold swing, and switching ratio. Ferroelectric Junctionless BioFET and Gate Engineered Ferroelectric Junctionless BioFET performances have been compared. It has been found that the Gate Engineered Ferroelectric Junctionless BioFET shows the maximum improvement for protein (1202.4%, 111%, and 565%) and DNA (787.5%, 117.3%, and 600%). For ultrasensitive bio-sensing applications, the Gate Engineered Ferroelectric Junctionless BioFET is shown to be suitable.

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Section: Introductionmentioning

confidence: 99%

Gate Engineered Ferroelectric Junctionless BioFET for Label-Free Detection of Biomolecules

Yadav

Rewari

Pandey

2023

Preprint

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Surface potential and mobile charge based drain current modeling of double gate junctionless accumulation mode negative capacitance field effect transistor

Yadav,

Rewari,

Pandey

2023

Int J Numerical Modelling

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An analytical drain current model for double gate junctionless accumulation mode negative capacitance field effect transistor (DG‐JAM‐NC‐FET) has been developed, combining the merits of junctionless accumulation mode and negative capacitance effect such as fabrication feasibility, low power dissipation, and reduced degradation in mobility. The novelty manifested in our work is because of the incorporation of the JAM structure in ferroelectric‐based negative capacitance FET. The benefit of JAM over existing FETs is that it combines the benefits of the junctionless transistor (JLT) and conventional FETs. It avoids excessive parasitic resistance due to stronger doping in the source and drain areas, resulting in higher conductivity and better characteristics than JLT. An analytical surface potential and threshold voltage have been developed using Poisson's equation and Landau Khalatnikov's (L‐K) equation. The drain current is then determined by integrating the mobile charge using the Pao–Sah integral. Various critical parameters such as surface potential, gain, capacitance, mobile charge density, drain current, threshold voltage, subthreshold swing, transconductance, and the switching ratio have been assessed extensively by varying ferroelectric layer and channel layer thicknesses, respectively. The ON current increases with the increase in ferroelectric thickness due to the voltage amplification given by the ferroelectric layer, and the switching curve gets steeper. The analytical modeling is done in MATLAB, and its comparison is made with the TCAD numerical simulation. The obtained analytical results and the numerical simulation results correspond well.

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Analytical Modelling and Simulation of a Junctionless Accumulation-Mode Tube (JLAMT) Field-Effect Transistor (FET) for Radiation Sensing Dosimeter Applications

Batra¹,

Rewari

2023

J. Electron. Mater.

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Fundamentals of Junctionless Field‐Effect Transistors

Cited by 5 publications

References 166 publications

Gate Engineered Ferroelectric Junctionless BioFET for Label-Free Detection of Biomolecules

Gate Engineered Ferroelectric Junctionless BioFET for Label-Free Detection of Biomolecules

Surface potential and mobile charge based drain current modeling of double gate junctionless accumulation mode negative capacitance field effect transistor

Analytical Modelling and Simulation of a Junctionless Accumulation-Mode Tube (JLAMT) Field-Effect Transistor (FET) for Radiation Sensing Dosimeter Applications

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