Surface potential and mobile charge based drain current modeling of double gate junctionless accumulation mode negative capacitance field effect transistor
Snehlata Yadav,
Sonam Rewari,
Rajeshwari Pandey
Abstract:An analytical drain current model for double gate junctionless accumulation mode negative capacitance field effect transistor (DG‐JAM‐NC‐FET) has been developed, combining the merits of junctionless accumulation mode and negative capacitance effect such as fabrication feasibility, low power dissipation, and reduced degradation in mobility. The novelty manifested in our work is because of the incorporation of the JAM structure in ferroelectric‐based negative capacitance FET. The benefit of JAM over existing FET… Show more
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