In this brief, we demonstrate using 2-D simulations that the use of a heterodielectric BOX (HDB) above a highly doped ground plane can control the tunneling width at the channel-drain interface and lead to a significant reduction in the ambipolar current in tunnel FETs (TFETs). The HDB consists of SiO 2 under the source and the channel regions, and HfO 2 under the drain region. When the thickness of the HDB is 25 nm and the ground plane is heavily doped, we show that the drain region at the channel-drain interface is effectively depleted. As a result, the tunneling width at the channel-drain interface increases leading to a complete suppression of ambipolar conduction in a TFET even when the gate voltage V GS = −0.8 V.Index Terms-Ambipolarity, ON-state current, sourcepocket (p-n-p-n) tunneling FET (TFET).
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