Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry and kinetics of P-for-As exchange reaction

Abstract

Articles you may be interested inSurface chemistry of a Cu(I) beta-diketonate precursor and the atomic layer deposition of Cu2O on SiO2 studied by x-ray photoelectron spectroscopy J. Vac. Sci. Technol. A 32, 041505 (2014); 10.1116/1.4878815Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry of Asfor-Sb and Sb-for-As exchange reactions Fundamental reactions controlling anion exchange during the synthesis of Sb/As mixed-anion heterojunctionsThe fundamental chemical and kinetic surface processes governing the P-for-As exchange reaction during epitaxial layer synthesis are investigated. Exposure of a GaAs surface to phosphorus molecular beams ͑P 2 ͒ is carried out to create superlattice structures realized by surface reactions. The impact of the GaAs surface reconstruction, the P-soak time, and the surface temperature on the extent of intermixing and on the mechanism governing the anion exchange has been studied using x-ray diffraction, spectroscopic ellipsometry, x-ray photoelectron spectroscopy, and atomic force microscopy. It is found that As-rich GaAs surface reconstructions inhibit P-for-As exchange. The extent of the anion exchange increases with temperature. Furthermore, the P-for-As exchange is not controlled by P diffusion into the GaAs. We propose a chemical model that includes P chemisorption and indiffusion, and the competition between P-for-As anion exchange and the formation of AsP isoelectronic compounds.

Effect of different P/As ratio on the optical and structural properties of GaAs1−xPx/GaAs

“…[8 -10] Also, the high resolution X-ray diffraction (HRXRD) is a nondestructive technique which precisely determines the alloy compositions and lattice constants of semiconductor alloys. [11] In this study, GaAs 1−x P x /GaAs(100) ternary alloys were grown by using molecular beam epitaxi (MBE) together with continuous growth (CG) and graded growth (GG) methods with various phosphorous compositions determined by HRXRD measurements. CP energies of the interband transition edges are determined by analyzing the DF data obtained by SE measurements.…”

Interface Engineering for InGaAs n-MOSFET Application Using Plasma PH[sub 3]–N[sub 2] Passivation

“…25 It was also reported that surface modifications such as protrusion and crosshatch have been observed when anion exchange reaction between group V atoms in reactants and substrate occurs on the III-V semiconductor surface. 20,26 Therefore, the surface modifications observed in PH 3 annealed samples A and C, treated without afterglow discharge, may suggest that the P-for-As exchange reaction is the major type of phosphorus incorporation for the PH 3 -based treatments of In 0.53 Ga 0.47 As. This is supported by the chemical analysis that is discussed in the following chapter.…”

Hybrid Neural Network Modeling of Anion Exchange at the Interfaces of Mixed Anion III–V Heterostructures Grown by Molecular Beam Epitaxy

“…The rmse values are expressed as a percentage of the maximum X-ray intensity for each superlattice. Theses structures were confirmed using spectroscopic ellipsometry (SE), a nondestructive optical technique capable of analyzing layered structures [4]. …”