Fundamental materials studies of undoped, In-doped, and As-doped Hg1−xCdxTe

Swartz, C. H.; Tompkins, Randy P.; Giles, N. C.; Myers, T. H.; Edwall, D. D.; Ellsworth, J.; Piquette, E. C.; Arias, J. M.; Berding, M. A.; Krishnamurthy, Srinivasan; Vurgaftman, I.; Meyer, J. R.

doi:10.1007/s11664-004-0074-1

Cited by 30 publications

(20 citation statements)

References 22 publications

(13 reference statements)

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“…Note that the variable field Hall measurements were necessary to separate surface and interfacial conduction to give the appropriate carrier concentrations. 1 Auger and radiative lifetimes for all three samples were calculated as described above, with this value of E D , and compared with measured values. The calculated Auger lifetimes in all samples are found to be important only at higher temperatures, where the material is intrinsic, approximately 100 K for the narrow gap x ϭ 0.22 alloys and at about 200 K for the x ϭ 0.31 alloy.…”

Section: Results: Comparison Of Theory With Experiments N-type Hgcdtementioning

confidence: 99%

“…In a recent study, we measured temperaturedependent photoconductance lifetimes in n-doped and nominally undoped HgCdTe grown by molecular beam epitaxy (MBE). 1 To understand the impact of various postgrowth anneals on the properties of HgCdTe, we subjected the samples discussed in that paper to either a standard single-step anneal (10 h at 245°C) or a two-step anneal (several minutes at 430°C, followed by an n-type conversion anneal). We correlated these lifetime measurements with results of variable magnetic-field Hall measurements on the same samples to develop a better understanding of the performance-limiting materials properties of infrared devices.…”

Section: Introductionmentioning

confidence: 99%

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Model for minority carrier lifetimes in doped HgCdTe

Krishnamurthy

Berding

et al. 2005

Journal of Elec Materi

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We calculate the radiative, Auger, and the Shockley-Read-Hall recombination rates with Fermi-Dirac statistics and accurate band structures to explain the measured temperature dependence and doping dependence of minority carrier lifetimes in three n-and one p-type sample. We show that a trap state tracking the conduction band edge with very small activation energy can explain the lifetimes in the n-doped samples considered here. Similarly, for moderately p-doped HgCdTe alloy, a trap level at 75 meV is needed to explain the observed lifetimes. In either case, movement of Fermi level with respect to the trap level explains the temperature dependence of the lifetimes.

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Section: Results: Comparison Of Theory With Experiments N-type Hgcdtementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Model for minority carrier lifetimes in doped HgCdTe

Krishnamurthy

Berding

et al. 2005

Journal of Elec Materi

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“…It has been shown that, in general, this is not true for n-type HgCdTe on bulk CdZnTe. 3,4 Multi-field Hall measurements and analytical techniques such as quantitative mobility spectrum analysis (QMSA) have been used to extract multi-carrier information about n-type HgCdTe. 3,4 However, single field, variable temperature, Hall mobility measurements have typically been used to model the electron mobility of n-type HgCdTe, assuming that a single carrier type (single electron) is dominant.…”

Section: Transport Measurementsmentioning

confidence: 99%

“…3,4 Multi-field Hall measurements and analytical techniques such as quantitative mobility spectrum analysis (QMSA) have been used to extract multi-carrier information about n-type HgCdTe. 3,4 However, single field, variable temperature, Hall mobility measurements have typically been used to model the electron mobility of n-type HgCdTe, assuming that a single carrier type (single electron) is dominant. [5][6][7][8][9][10][11] The single electron approximation has been adopted for this analysis of the electron mobility of n-type LWIR HgCdTe on Si.…”

Section: Transport Measurementsmentioning

confidence: 99%

Role of Dislocation Scattering on the Electron Mobility of n-Type Long Wave Length Infrared HgCdTe on Silicon

Carmody

Edwall

Ellsworth

et al. 2007

Journal of Elec Materi

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It has been reported that the basic electrical properties of n-type long wave length infrared (LWIR) HgCdTe grown on silicon, including the majority carrier mobility (l e ) and minority carrier lifetime (s), are qualitatively comparable to those reported for LWIR HgCdTe grown on bulk CdZnTe by molecular beam epitaxy (MBE). Detailed measurements of the majority carrier mobility have revealed important differences between the values measured for HgCdTe grown on bulk CdZnTe and those measured for HgCdTe grown on buffered silicon substrates. The mobility of LWIR HgCdTe grown on buffered silicon by MBE is reported over a large temperature range and is analyzed in terms of standard electron scattering mechanisms. The role of dislocation scattering is addressed for high dislocation density HgCdTe grown on lattice-mismatched silicon. Differences between the low temperature mobility data of HgCdTe grown on bulk CdZnTe and HgCdTe grown on silicon are partially explained in terms of the dislocation scattering contribution to the total mobility.

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“…In p--HgCdTe sample Hall measurements electrical contacts quality plays key role. Rockwell used front-surface, wire--bonded contacts [9], whereas soldered In contacts were used at West Virginia University [10]. In our laboratory, we elaborated different methods which ensure high repeatability and low measure deviation for the set of samples coming from one growth process.…”

Section: Growth and Characterization Of Hgcdte Structuresmentioning

confidence: 99%

Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

et al. 2010

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One of the key factor which determine HgCdTe photodiode quality is acceptor doping efficiency. This paper presents significant progress made over the past three years in development of acceptor doping technology in metalorganic chemical vapour deposition HgCdTe photovoltaic detectors. High acceptor doping is required for P + -contact layers, whereas low doping is necessary for p-type absorbing base layer. Previously, AsH3 precursor was used as an acceptor dopant. This precursor is partially incorporated as electrically neutral As-H pairs, which are likely to be recombination centres in HgCdTe and in consequence influence on the carriers lifetime lowering. Substituting of AsH3 by TDMAAs resulted in higher carrier lifetimes and thereby about one order of magnitude higher R0A product of HgCdTe photodiodes in temperatures close to 230 K.

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Fundamental materials studies of undoped, In-doped, and As-doped Hg1−xCdxTe

Cited by 30 publications

References 22 publications

Model for minority carrier lifetimes in doped HgCdTe

Model for minority carrier lifetimes in doped HgCdTe

Role of Dislocation Scattering on the Electron Mobility of n-Type Long Wave Length Infrared HgCdTe on Silicon

Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

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