Model for minority carrier lifetimes in doped HgCdTe

Krishnamurthy, Srinivasan; Berding, M. A.; Yu, Zhi-Gang; Swartz, C. H.; Myers, T. H.; Edwall, D. D.; DeWames, R. E.

doi:10.1007/s11664-005-0035-3

Cited by 27 publications

(24 citation statements)

References 14 publications

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“…Indeed, both temperature and carrier concentration dependence can be adequately modeled using SRH recombination once it is modified to account for the degenerate statistics. 8,14 Also shown in Fig. 7b is the more conventionally accepted trend for Auger 1 recombination, 15 which more closely fits our data for carrier concentrations .4 3 10 14 cm ÿ 3 .…”

Section: Photoconductance Lifetime Measurementssupporting

confidence: 87%

“…The use of variable-field Hall analysis resolved the high temperature p-type carrier concentration and yielded results for the intrinsic electron. The figure indicates that the temperature dependences for both carrier concentrations could be accurately predicted using recent band structure calculations, 8 and employing the measured x-value and the previously measured As activation energy of 11 meV. This close correspondence between experiment and theory confirms the validity of the band structure calculations.…”

Section: Variable Magnetic Field Hall Measurementssupporting

confidence: 78%

“…Also shown are Krishnamurthy's calculations for radiative and Auger 7 recombination. 8,14 Most of the measured values are in better agreement with this calculation, which serves as a reasonable upper bound for the majority of measured lifetimes. There remain a finite but significant number of samples which exhibit photoconductance lifetimes one or more orders of magnitude longer than predicted.…”

Section: Photoconductance Lifetime Measurementssupporting

confidence: 58%

“…Intrinsic minority carrier recombination lifetimes were predicted with the use of full band structure calculations. 8 For infrared photoluminescence measurements (IR PL), samples were mounted in an Oxford Instruments flow cryostat equipped with ZnSe windows. The IR PL was detected using a ThermoNicolet Nexus 870 FTIR spectrometer equipped with a Ge filter and using a HgCdTe detector operating at 80 K. PL spectra were taken at 4.5 K with a 50-mW excitation from a Nd:YAG laser (l 5 1,064 nm).…”

Section: Methodsmentioning

confidence: 99%

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Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg1−xCdxTe grown by molecular beam epitaxy

Swartz

Chandril

Tompkins

et al. 2006

Journal of Elec Materi

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Variable magnetic field Hall and transient photoconductance lifetime measurements were performed on a series of undoped, In-doped, and As-doped HgCdTe samples grown by molecular beam epitaxy and metalorganic chemical vapor deposition. Temperature variation and, in the case of Hall, magnetic-field variation are needed to give a more complete picture of the mechanisms that control lifetimes in HgCdTe samples. Recent predictions of recombination lifetimes from full band structure calculations were compared to experimental lifetimes at various doping levels at long-wave infrared (LWIR) and mid-wave infrared (MWIR) compositions. For n-type material, lifetimes from low doping levels fall well below the predictions, implying that Shockley-Read-Hall (SRH) recombination is still dominant. MWIR samples have a lifetime that increases somewhat with carrier concentration, suggesting that In doping passivates the SRH defects for that composition. Lifetimes in p-type MWIR material appear to be well-explained by recent theoretical calculations. In p-type material, trapping states may be introduced during the incorporation and activation of As, since some samples with unusually long lifetimes had a distinctly different type of temperature dependence.

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Section: Photoconductance Lifetime Measurementssupporting

confidence: 87%

Section: Variable Magnetic Field Hall Measurementssupporting

confidence: 78%

Section: Photoconductance Lifetime Measurementssupporting

confidence: 58%

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg1−xCdxTe grown by molecular beam epitaxy

Swartz

Chandril

Tompkins

et al. 2006

Journal of Elec Materi

Self Cite

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“…The gathered values of carrier lifetimes in this table and in Fig. 6 excess the values presented by Lopes et al [14] about one order of magnitude and confirm the new model proposed by Krisnamurthy et al [15]. Doping profile study and understanding the electrical properties of single layers enable to control compound HgCdTe heterostructure deposition for infrared photodiode fabrication.…”

Section: Growth and Characterization Of Hgcdte Structuressupporting

confidence: 86%

Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

et al. 2010

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One of the key factor which determine HgCdTe photodiode quality is acceptor doping efficiency. This paper presents significant progress made over the past three years in development of acceptor doping technology in metalorganic chemical vapour deposition HgCdTe photovoltaic detectors. High acceptor doping is required for P + -contact layers, whereas low doping is necessary for p-type absorbing base layer. Previously, AsH3 precursor was used as an acceptor dopant. This precursor is partially incorporated as electrically neutral As-H pairs, which are likely to be recombination centres in HgCdTe and in consequence influence on the carriers lifetime lowering. Substituting of AsH3 by TDMAAs resulted in higher carrier lifetimes and thereby about one order of magnitude higher R0A product of HgCdTe photodiodes in temperatures close to 230 K.

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Minority carrier lifetimes in HgCdTe alloys

Krishnamurthy

Berding

2006

Journal of Elec Materi

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We present the results of full band structure calculations of Fermi levels, intrinsic carrier densities, and one-photon absorption coefficients in undoped HgCdTe alloys. The full band structure is used in the calculation of majority and minority carrier densities and the minority carrier lifetimes limited by radiative, Auger-1, and Auger-7 mechanisms in both n-and p-doped alloys. The lifetimes we predicted differ substantially from those calculated with widely used analytical expressions, except in cases where the hole density is small. This difference originates from the significantly non-parabolic and anisotropic valence bands, which are of increasing significance as the hole density increases. From a comparison of the calculated and measured lifetimes, we deduce that the lifetimes at low temperatures are limited by the ShockleyRead-Hall (SRH) recombination. We have generalized the SRH expression to include Fermi-Dirac statistics, but we still treat the density, energy level, and cross section as adjustable parameters. We find that the calculated radiative and Auger recombination lifetimes, as well as SRH lifetimes, can fit the measured lifetimes using traps located (a) near the conduction band edge in n-HgCdTe and (b) near the valence band edge for p-HgCdTe. In addition, the movement of Fermi level with respect to the trap level explains the observed temperature-dependence of the lifetimes. We conclude that there is considerable room for improvement in HgCdTe material quality.

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Model for minority carrier lifetimes in doped HgCdTe

Cited by 27 publications

References 14 publications

Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg1−xCdxTe grown by molecular beam epitaxy

Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg1−xCdxTe grown by molecular beam epitaxy

Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

Minority carrier lifetimes in HgCdTe alloys

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