Functionalization of SiC(110) Surfaces via Porphyrin Adsorption: Ab Initio Results

Catellani, Alessandra; Calzolari, Arrigo

doi:10.1021/jp209072n

Cited by 21 publications

(11 citation statements)

References 39 publications

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“…On the other hand, the (110) plane of β‐SiC is nonpolar, and thus is an ideal surface to investigate the relaxation and electronic properties of β‐SiC . The (110) plane can be used in biosensors by modifying it using an organic molecule . It is predicted that a magnetic moment can be induced in the (110) plane by introducing defects .…”

Section: Introductionmentioning

confidence: 99%

High‐Speed Preparation of <111>‐ and <110>‐Oriented β‐SiC Films by Laser Chemical Vapor Deposition

Zhang

et al. 2013

J. Am. Ceram. Soc.

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Highly oriented <111> and <110> b-SiC films were prepared on Si(100) single crystal substrates by laser chemical vapor deposition using a diode laser (wavelength = 808 nm) and HMDS (Si(CH 3 ) 3 -Si(CH 3 ) 3 ) as a precursor. The effects of laser power (P L ), total pressure (P tot ), and deposition temperature (T dep ) on the orientation, microstructure, and deposition rate (R dep ) were investigated. The orientation of the b-SiC films changed from <111> to random to <110> with increasing P L and P tot . The <111>-, randomly, and <110>-oriented b-SiC films exhibited dense, cauliflower-like, and cone-like microstructures, respectively. Stacking faults were observed in the <111>-and <110>-oriented films, and aligned parallel to the (111) plane in the <111>-oriented film, whereas they were perpendicular to the (110) plane in the <110>-oriented film. The highest R dep of the <111>-oriented b-SiC film was 200 lm/h at P tot = 200 Pa and T dep = 1420 K, whereas that of the <110>-oriented film was 3600 lm/h at P tot = 600 Pa and T dep = 1605 K.

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Section: Introductionmentioning

confidence: 99%

High‐Speed Preparation of <111>‐ and <110>‐Oriented β‐SiC Films by Laser Chemical Vapor Deposition

Zhang

et al. 2013

J. Am. Ceram. Soc.

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“…Methyl undec-10-enoate and 2,2,2-trifluoroethyl undec-10-enoate can be bonded to the SiC surfaces, and the esterterminated surfaces allow for further attachment of amine compounds. Using the density functional simulation, molecular sensitization of the nonpolar SiC (110) surface is studied [215]. Aromatic fragments up to a full porphyrin molecule are considered and the result shows that there is a relatively low affinity between aromatic rings and SiC surface.…”

Section: Other Types Of Surface Treatmentmentioning

confidence: 99%

General Properties of Bulk SiC

Fan

Chu

2014

Engineering Materials and Processes

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The fabrication and properties of silicon carbide crystals have been extensively studied because as a wide bandgap semiconductor, silicon carbide is ideal for electronic applications requiring high temperature, high frequency, and high power. The electrical and electronic properties as well as device applications of bulk silicon carbide have been reviewed [1][2][3]. In this chapter, which provides a self-contained framework to facilitate the understanding of the properties of silicon carbide nanostructures, the basic properties of silicon carbide crystals are reviewed.

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“…Polycrystalline 3C-SiC (110) deposits were deposited by halide chemical vapor deposition method (HCVD) in our previous study, however, many kinds of defects were in the polycrystalline deposits, such as grain boundary and porous. 11,12 Theoretically, <110>-oriented 3C-SiC is an excellent sensitive structural materials that could be used as biosensors 13 and pressure sensors. 14 Due to the special reconstruction and strong anisotropy, 3C-SiC (110) epitaxial growth was hardly reported.…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial growth of thick 3C‐SiC (110) films by Laser CVD

Sun

Yang

et al. 2019

J Am Ceram Soc

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Previously, we found 3C-SiC films favor to grow in <111> orientation on Si (110) (https://doi.org/10.1111/jace.15260). However, epitaxial growth of thick <110>-3C-SiC is still a big challenge. In this study, thick 3C-SiC (110) epitaxial films were prepared on Si (110) substrate by laser chemical vapor deposition (LCVD) using hexamethyldisilane (HMDS) in H 2 atmosphere. The investigation of growth mechanism showed that the laser of LCVD played an important role during the depositions. Observation by high-resolution transmission electron microscopy (HRTEM) revealed that the interface of 3C-SiC (110)/Si (110) exhibited rough texture at atomic level. The atomic roughness on Si (110) surface could be a key factor for 3C-SiC (110) nucleation. The growth of thick 3C-SiC (110) epitaxial films could be very promising for new development in power electronics applications.

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Functionalization of SiC(110) Surfaces via Porphyrin Adsorption: Ab Initio Results

Cited by 21 publications

References 39 publications

High‐Speed Preparation of <111>‐ and <110>‐Oriented β‐SiC Films by Laser Chemical Vapor Deposition

High‐Speed Preparation of <111>‐ and <110>‐Oriented β‐SiC Films by Laser Chemical Vapor Deposition

General Properties of Bulk SiC

Heteroepitaxial growth of thick 3C‐SiC (110) films by Laser CVD

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