General Properties of Bulk SiC

Fan, Jiyang; Chu, Paul K.

doi:10.1007/978-3-319-08726-9_2

Cited by 12 publications

(4 citation statements)

References 246 publications

(290 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This makes them ideal photodetectors in certain applications for monitoring the UV spectrum without the need for solar rejection filters. Furthermore, semiconductor SiC offers outstanding long term stability even when operated under high-intensity UV radiation (up to 1000 W/m 2 ) and at high operating temperature 12 13 . For example, using rapid thermal chemical vapor deposition (RTCVD) techniques, Chang, et al .…”

Section: Introductionmentioning

confidence: 99%

A new approach for fabrications of SiC based photodetectors

Aldalbahi

Rivera

et al. 2016

Sci Rep

111

View full text Add to dashboard Cite

We report on a new approach to quickly synthesize high-quality single crystalline wide band gap silicon carbide (SiC) films for development of high-performance deep ultraviolet (UV) photodetectors. The fabricated SiC based UV photodetectors exhibited high response while maintaining cost-effectiveness and size miniaturization. Focus of the experiments was on studies of electrical and electronic properties, as well as responsivity, response and recovery times, and repeatability of the deep UV photodetectors. Raman scattering spectroscopy and scanning electron microscope (SEM) were used to characterize the SiC materials. Analyses of the SEM data indicated that highly flat SiC thin films have been obtained. Based on the synthesized SiC, deep UV detectors are designed, fabricated, and tested with various UV wavelength lights at different radiation intensities. Temperature effect and bias effect on the photocurrent strength and signal-to-noise ratio, humidity effect on the response time and recovery time of the fabricated detectors have been carefully characterized and discussed. The detectors appear to have a very stable baseline and repeatability. The obtained responsivity is more than 40% higher compared to commercial detectors. The good performance of the photodetectors at operating temperature up to 300 °C remains nearly unchanged.

show abstract

Section: Introductionmentioning

confidence: 99%

A new approach for fabrications of SiC based photodetectors

Aldalbahi

Rivera

et al. 2016

Sci Rep

111

View full text Add to dashboard Cite

show abstract

“…It is a very valuable technique because it is a non-contact method [12] Figure 3 shows the Raman spectra of pristine 4H-SiC samples in the 100 -1800 cm -1 range. 4H-SiC has a c-axis normal to the Si-C double atomic layers [13]. Transverse phonon coupling modes are perpendicular to the c-axis and the axial or longitudinal phonon coupling modes are parallel to the c-axis [12].…”

Section: Binary Collision Approximationmentioning

confidence: 99%

Defects in swift heavy ion irradiated n-4H-SiC

Tunhuma

Diale

Nel

et al. 2019

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

“…Polytypism is an abundant phenomenon in chemistry and crystallography, which plays an important role in numerous solid-state systems. − In the structure of a compound prone to polytypism, atomic layers or layered structural units may adopt different stacking motifs, thereby yielding two or more crystalline modifications known as polytypes. − For certain systems (e.g., SiC and CdI 2 ), crystallographic data include up to hundreds of polytypes. , The latter differ not only in their crystal structure but also in structure-related physical characteristics (optical properties, − thermal conductivity, , band structure, − crystal “hopping” effect, and even superconductivity) that makes them a versatile platform for the development of functional materials with tunable properties.…”

Section: Introductionmentioning

confidence: 99%

Polytypism and Packing-Dependent Colossal Positive and Negative Thermal Expansion in a 2D Layered Cerium-Based Coordination Polymer

Kendin,

Shaulskaya,

Tsymbarenko

2024

Crystal Growth & Design

View full text Add to dashboard Cite

A two-dimensional layered coordination polymer [Ce 2 (H 2 O) 2 Prop 6 ] ∞ (Prop − = C 2 H 5 COO − ) has been crystallized in the form of two polytypes (α and β). Their structural features have been studied by means of variable-temperature single-crystal (VT-SCXRD) and powder (VT-PXRD) X-ray diffraction along with pair distribution function analysis of total X-ray scattering data (PDF). As revealed from VT-SCXRD and PDF data, α and β polytypes possess a similar local structure of layers but differ in the arrangement of layers. Single crystals and powders of [Ce 2 (H 2 O) 2 Prop 6 ] ∞ exhibit highly anisotropic thermal expansion, which is packing-dependent and drastically differs for α and β polytypes. Unit cell parameters for α demonstrate a nonlinear temperature dependence with colossal positive (α 3 CTE = +899 MK −1 ) and negative (α 1 CTE = −427 MK −1 ) linear coefficients of thermal expansion (CTEs) in the 190−210 K range. The temperature dependence of unit cell parameters for β demonstrates no colossal CTEs in the 100−300 K range. Periodic DFT-D calculations have shown the weakening of interlayer interactions (cohesive energies for α and β are 149 and 144 mJ/m 2 at 100 K, and 111 and 129 mJ/m 2 at 300 K, respectively) and relaxation of stressed layers upon heating.

show abstract

General Properties of Bulk SiC

Cited by 12 publications

References 246 publications

A new approach for fabrications of SiC based photodetectors

A new approach for fabrications of SiC based photodetectors

Defects in swift heavy ion irradiated n-4H-SiC

Polytypism and Packing-Dependent Colossal Positive and Negative Thermal Expansion in a 2D Layered Cerium-Based Coordination Polymer

Contact Info

Product

Resources

About