We provide the first
systematic characterization of the
structural
and photoluminescence properties of optically active centers fabricated
upon implantation of 30–100 keV Mg+ ions in synthetic
diamond. The structural configurations of Mg-related defects were
studied by the electron emission channeling technique for short-lived,
radioactive 27Mg implantations at the CERN-ISOLDE facility,
performed both at room temperature and 800 °C, which allowed
the identification of a major fraction of Mg atoms (∼30 to
42%) in sites which are compatible with the split-vacancy structure
of the MgV complex. A smaller fraction of Mg atoms (∼13 to
17%) was found on substitutional sites. The photoluminescence emission
was investigated both at the ensemble and individual defect level
in the 5–300 K temperature range, offering a detailed picture
of the MgV-related emission properties and revealing the occurrence
of previously unreported spectral features. The optical excitability
of the MgV center was also studied as a function of the optical excitation
wavelength to identify the optimal conditions for photostable and
intense emission. The results are discussed in the context of the
preliminary experimental data and the theoretical models available
in the literature, with appealing perspectives for the utilization
of the tunable properties of the MgV center for quantum information
processing applications.
We have investigated the current-voltage (I-V) characteristics of nickel (Ni), cobalt (Co), tungsten (W) and palladium (Pd) Schottky contacts on n-type 4H-SiC in the 300-800 K temperature range. Results extracted from I-V measurements of Schottky barrier diodes showed that barrier height (Ф Bo ) and ideality factor (n) were strongly dependent on temperature. Schottky barrier heights for contacts of all the metals showed an increase with temperature between 300 K and 800 K. This was attributed to barrier inhomogeneities at the interface between the metal and the semiconductor, which resulted in a distribution of barrier heights at the interface. Ideality factors of Ni, Co and Pd decreased from 1.6 to 1.0 and for W the ideality factor decreased from 1.1 to 1.0 when the temperature was increased from 300 K to 800 K respectively. The device parameters were compared to assess advantages and disadvantages of the metals for envisaged applications.
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