We provide the first
systematic characterization of the
structural
and photoluminescence properties of optically active centers fabricated
upon implantation of 30–100 keV Mg+ ions in synthetic
diamond. The structural configurations of Mg-related defects were
studied by the electron emission channeling technique for short-lived,
radioactive 27Mg implantations at the CERN-ISOLDE facility,
performed both at room temperature and 800 °C, which allowed
the identification of a major fraction of Mg atoms (∼30 to
42%) in sites which are compatible with the split-vacancy structure
of the MgV complex. A smaller fraction of Mg atoms (∼13 to
17%) was found on substitutional sites. The photoluminescence emission
was investigated both at the ensemble and individual defect level
in the 5–300 K temperature range, offering a detailed picture
of the MgV-related emission properties and revealing the occurrence
of previously unreported spectral features. The optical excitability
of the MgV center was also studied as a function of the optical excitation
wavelength to identify the optimal conditions for photostable and
intense emission. The results are discussed in the context of the
preliminary experimental data and the theoretical models available
in the literature, with appealing perspectives for the utilization
of the tunable properties of the MgV center for quantum information
processing applications.
We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified and attributed to the SnV center due to their occurrence in the PL spectra of the very same single-photon emitting defects. We show that the relative occurrence of the three spectral features can be modified by oxidizing the sample surface following thermal annealing. We finally report the relevant emission properties of each class of individual emitters, including the excited state emission lifetime and the emission intensity saturation parameters.
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