High‐Speed Preparation of <111>‐ and <110>‐Oriented β‐SiC Films by Laser Chemical Vapor Deposition

Abstract

Highly oriented <111> and <110> b-SiC films were prepared on Si(100) single crystal substrates by laser chemical vapor deposition using a diode laser (wavelength = 808 nm) and HMDS (Si(CH 3 ) 3 -Si(CH 3 ) 3 ) as a precursor. The effects of laser power (P L ), total pressure (P tot ), and deposition temperature (T dep ) on the orientation, microstructure, and deposition rate (R dep ) were investigated. The orientation of the b-SiC films changed from <111> to random to <110> with increasing P L and P tot . The <111>-, randomly, and <110>-oriented b-SiC films exhibited dense, cauliflower-like, and cone-like microstructures, respectively. Stacking faults were observed in the <111>-and <110>-oriented films, and aligned parallel to the (111) plane in the <111>-oriented film, whereas they were perpendicular to the (110) plane in the <110>-oriented film. The highest R dep of the <111>-oriented b-SiC film was 200 lm/h at P tot = 200 Pa and T dep = 1420 K, whereas that of the <110>-oriented film was 3600 lm/h at P tot = 600 Pa and T dep = 1605 K.

Ultra‐Fast Fabrication of <110>‐Oriented β‐SiC Wafers by Halide CVD

“…Synthetically, the reason of <110> direction having the fastest growth rate may be probable caused by the combination of three mechanisms, i.e., adsorption‐limited regime, relatively lower surface of (220) plane, and growth of TPRE. The results of previous open articles are similar to our assumption.…”

“…The transition from CRR to MTR is usually led by an increase in temperature. The activation energy is about 350 kJ/mol in the lower T dep regime, indicating that the deposition is in the CRR domain . In the higher T dep regime, the slope decreased to ~120 kJ/mol from T dep = 1773 K, showing the transformation from CRR to MTR domain.…”

High‐speed heteroepitaxial growth of 3C‐SiC (111) thick films on Si (110) by laser chemical vapor deposition

“…Hence, LCVD would supply more kinetic energy for reactive species to move to the stable growth site for epitaxial growth, 45 which leading to high R dep in 3C-SiC (111) epi-growth on Si (110) by LCVD. The significant improvement of deposition rate may attribute to the three factors.…”

Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD

“…The total pressure ( P tot ) was fixed to 1000 Pa, the T dep was 1473‐1633 K and the deposition time was 5‐20 minutes. More details of the experiments and LCVD apparatus can be found in our previous works …”