Ultra‐Fast Fabrication of <110>‐Oriented β‐SiC Wafers by Halide CVD

Abstract

Φ80 mm‐diameter, highly <110>‐oriented β‐SiC wafers were ultra‐fast fabricated via halide chemical vapor deposition (CVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors. The effects of deposition temperature (Tdep) and total pressure (Ptot) on the orientations, microstructures, and deposition rate (Rdep) were investigated. Rdep dramatically increased with increasing Tdep where maximum Rdep was 930 μm/h at Tdep = 1823 K and Ptot = 4 kPa, leading to a maximum of 1.9 mm in thickness in 2 h deposition. The <110>‐oriented β‐SiC was obtained at Tdep > 1773 K and Ptot = 1–4 kPa. Growth mechanism of <110>‐oriented β‐SiC has also been discussed under consideration of crystallographic planes, surface energy, and surface morphology.

Fine‐grained 3C‐SiC thick films prepared via hybrid laser chemical vapor deposition

“…Theoretically, the hardness of 3C-SiC along the <111> plane is higher than that of the random orientation, and both of the abovementioned orientations have higher hardness than the <110> plane due to the lower atomic package density along the <110> plane. 6,10 Furthermore, the hardness values of the randomly oriented SiC films obtained via hybrid laser CVD at 1523 K was 35 GPa, which is almost the same as the hardness values of the <111>-oriented SiC films 10 ; this result may be explained by the small grain size. 11 Wollmershauser et al 40 studied the hardness values of bulk ceramics with different particle sizes, in which the hardness values of ceramics increased as the grain sizes decreased.…”

“…The SiC films prepared via hybrid laser CVD exhibit random orientations, whereas the films prepared via diode laser CVD have <110>‐orientations. Theoretically, the hardness of 3C‐SiC along the <111> plane is higher than that of the random orientation, and both of the abovementioned orientations have higher hardness than the <110> plane due to the lower atomic package density along the <110> plane . Furthermore, the hardness values of the randomly oriented SiC films obtained via hybrid laser CVD at 1523 K was 35 GPa, which is almost the same as the hardness values of the <111>‐oriented SiC films; this result may be explained by the small grain size .…”

“…For example, 3C‐SiC films that are a few millimeters in thickness have been prepared by a continuous mode diode laser CVD at 1673 K with an R dep of thousands of micrometers per hour . Because the thicknesses of the 3C‐SiC films were in the millimeter range, the average grain size of 3C‐SiC was also raised to tens or hundreds of micrometers . However, SiCs with fine‐grain microstructures usually has superior mechanical, electrical and optical properties compared to their large‐grained bulk counterparts .…”

“…10 Because the thicknesses of the 3C-SiC films were in the millimeter range, the average grain size of 3C-SiC was also raised to tens or hundreds of micrometers. 5,6,10 However, SiCs with fine-grain microstructures usually has superior mechanical, electrical and optical properties compared to their large-grained bulk counterparts. [11][12][13][14][15][16] For example, for fine-grained SiC obtained via the pulsed propylene method, the hardness was in the range of 37-43 GPa, which was approximately 10% higher than that of the large columnar-grained SiC layer.…”

Fabrication of an ultra‐thick‐oriented 3C‐SiC coating on the inner surface of a graphite tube by high‐frequency induction‐heated halide chemical vapor deposition

“…Using chloride as a precursor can greatly increase the deposition rate to produce a thicker SiC tube. Ultra‐thick‐oriented and highly crystalline 3C‐SiC were prepared on graphite plates using tetrachlorosilane (SiCl 4 ) and methane (CH 4 ) as precursors …”