Fabrication of an ultra‐thick‐oriented 3C‐SiC coating on the inner surface of a graphite tube by high‐frequency induction‐heated halide chemical vapor deposition

Abstract

Cubic SiC (3C‐SiC) is a promising material for nuclear industry applications due to its excellent properties. In this report, a highly oriented thick 3C‐SiC coating with good crystallinity was prepared on the inner surface of a monolithic graphite tube via high‐frequency induction‐heated halide chemical vapor deposition using SiCl4, CH4, and H2 as precursors. The texture coefficient (TC(hkl)), microstructure, and deposition rate along the tube axis was studied. 3C‐SiC coating with a high (111) orientation and crystallinity was obtained. Along the tube axis, TC(111) was consistent with the temperature distribution. The surficial morphology of the 3C‐SiC coating changed from pebble‐like to hexangular facet and then to hemispherical. The deposition rate and coating thickness were 300 μm/h and 615 μm, respectively, which is sufficiently rapid and thick enough to obtain free‐standing SiC tubes for nuclear reactors.

Epitaxial Growth of SiC Films on 4H-SiC Substrate by High-Frequency Induction-Heated Halide Chemical Vapor Deposition

“…Coatings 2022, 11, x FOR PEER REVIEW 2 of 14 one batch [12]. In this study, several specimens were prepared simultaneously at different temperatures in one batch by placing several substrates at different positions, i.e., a kind of high-throughput preparation.…”

“…On the other hand, in chlorine-containing raw materials, such as SiCl 4 and CH 3 -SiCl 3 , Cl atoms can combine with Si atoms to form a family of stable compounds at high temperatures, thereby inhibiting the formation of silicon droplets [10,11]. Furthermore, high-frequency induction coils are used to create a high-temperature environment in the CVD process for preparing a large number of films within one batch [12]. In this study, several specimens were prepared simultaneously at different temperatures in one batch by placing several substrates at different positions, i.e., a kind of high-throughput preparation.…”

Investigation of Al droplet wetting behavior on highly-oriented SiC

“…Most CVD-produced polycrystalline 3C-SiC have selective orientation, and different selective orientations have a substantial effect on the characteristics of SiC. 22,23 There are two types of calculations for the type of orientation; the TC (hkl) weave factor calculation, which visualizes the degree of orientation of crystals with multiple orientations, and the Lotgering orientation factor calculation, which better characterizes the individual orientation variations. For 3C-SiC, only h111i and h110i are common orientations.…”

Surface-Controlled Chemical Vapor Deposition of Silicon Carbide

“…The hydrocarbons often employed in SiCl4-based SiC CVD are mainly aliphatic hydrocarbons e.g. methane (CH4) [74][75][76][77][78][79][80][81][82][83][84] , propane (C3H8) 50,73,81,85,86 , acetylene (C2H2) 81 etc. The use of aromatic hydrocarbons as the carbon precursor, e.g.…”