Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices

Jiao, Yuqing; Pello, Josselin; Mejia, Alonso Millan; Shen, L.; Smalbrugge, Barry; Geluk, E.J.; Smit, M.K.; Tol, J.J.G.M. van der

doi:10.1364/ol.39.001645

Cited by 25 publications

(31 citation statements)

References 12 publications

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“…The lower intrinsic InP core (300 nm thick) acts as the passive waveguiding layer. With a width of 400 nm, the passive waveguide can support both fundamental tranverse electric (TE) and transverse magnetic (TM) modes, and provides high optical confinement, low propagation loss [11,12] and sharp bending [13].…”

Section: Chip Fabricationmentioning

confidence: 99%

Membrane-Based Receiver/Transmitter for Reconfigurable Optical Wireless Beam-Steering Systems

Jiao¹,

Cao²,

Shen³

et al. 2018

IEEE J. Select. Topics Quantum Electron.

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Section: Chip Fabricationmentioning

confidence: 99%

Membrane-Based Receiver/Transmitter for Reconfigurable Optical Wireless Beam-Steering Systems

Jiao¹,

Cao²,

Shen³

et al. 2018

IEEE J. Select. Topics Quantum Electron.

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“…An InGaAsP layer (not shown in the figure) between n-InP and i-InP is used as an etch-stop layer. Afterwards, electron beam lithography (EBL) is used with a C 60 /ZEP resist [16] to pattern the PD mesa, passive WGs, and surface grating couplers, followed by a dry etching process using RIE [17]. The width of the PD mesa is designed slightly larger than that of the n-contact, so that the rough edges of the metals will not transfer to the etched PD mesa.…”

Section: Design and Fabricationmentioning

confidence: 99%

“…Hence, we first look into the i-InP layer in our UTC-PDs. The thickness of this layer is only 300 nm, and its doping level is around 1×10 16 ical C-V profiler. The electrical field distribution in the vertical direction of the UTC-PD is simulated using COMSOL, showing a fully depleted i-InP layer even at zero bias (Fig.…”

Section: Static Measurementsmentioning

confidence: 99%

“…It is fabricated in an InP-based membrane which is bonded on a silicon wafer using benzocyclobutene (BCB). This InP-membrane-on-silicon (IMOS) platform has exhibited high-density integration of electrically pumped lasers and a large variety of passive devices [5,[15][16][17]. In this platform, all photonic components are formed in the InP membrane.…”

Section: Introductionmentioning

confidence: 99%

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High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform

Shen¹,

Jiao²,

Yao³

et al. 2016

Opt. Express

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Abstract:A uni-traveling carrier photodetector (UTC-PD), heterogeneously integrated on silicon, is demonstrated. It is fabricated in an InP-based photonic membrane bonded on a silicon wafer, using a novel double-sided processing scheme. A very high 3 dB bandwidth of beyond 67 GHz is obtained, together with a responsivity of 0.7 A/W at 1.55 µm wavelength. In addition, open eye diagrams at 54 Gb/s are observed. These results promise high speed applications using a novel full-functionality photonic platform on silicon. Tol, H. Ambrosius, G. Roelkens, and M. Smit, "Low-optical-loss, low-resistance Ag/Ge based ohmic contacts to n-type InP for membrane based waveguide devices," Opt. Mater. Express 5(2), 393-398 (2015). 24. A. Higuera-Rodriguez, V. Dolores-Calzadilla, Y. Jiao, E. J. Geluk, D. Heiss, and M. K. Smit, "Realization of efficient metal grating couplers for membrane-based integrated photonics," Opt. Lett. 40(12), 2755Lett. 40(12), -2757Lett. 40(12), (2015.

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“…They are fabricated in the IMOS platform. A detailed description of the process flow can be found elsewhere [13]. Afterwards, contacts with different lengths are patterned on top of the WGs using electron beam lithography and a lift-off process.…”

Section: Waveguide Loss Measurementsmentioning

confidence: 99%

Low-optical-loss, low-resistance Ag/Ge based ohmic contacts to n-type InP for membrane based waveguide devices

Shen¹,

Calzadilla²,

Wullems³

et al. 2015

Opt. Mater. Express

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We present the development of Ag/Ge based ohmic contacts to n-type InP with both low contact resistances and relatively low optical losses. A specific contact resistance as low as 1.5×10 −6 Ω cm 2 is achieved by optimizing the Ge layer thickness and annealing conditions. The use of Ge instead of metal as the first deposited layer results in a low optical absorption loss in the telecommunication wavelength range. Compared to Au based contacts, the Ag based metallization also shows considerably reduced spiking effects after annealing. Contacts with different lengths are deposited on top of InP membrane waveguides to characterize the optical loss before and after annealing. A factor of 5 reduction of the propagation loss compared to the conventional Au/Ge/Ni contact is demonstrated. This allows for much more optimized designs for membrane photonic devices.

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Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices

Cited by 25 publications

References 12 publications

Membrane-Based Receiver/Transmitter for Reconfigurable Optical Wireless Beam-Steering Systems

Membrane-Based Receiver/Transmitter for Reconfigurable Optical Wireless Beam-Steering Systems

High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform

Low-optical-loss, low-resistance Ag/Ge based ohmic contacts to n-type InP for membrane based waveguide devices

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