Frequency band and operating class reconfigurable GaN HEMT power amplifier for sustainable wireless communications and energy applications

Tuning Range and Power Handling Analysis of DTC-based Matching Networks for Reconfigurable High Power RF Circuits

“…In configuration 2 with C fix = 8.2 pF connected in series with C dtc , a parallel inductance of 1.8 nH was selected in order to maintain the resonant frequency of 2.1 GHz. The power handling can be enhanced by 4.2 dB according to (2) and (3). In the experiment, the power fed to the test configuration was varied from 0 dBm to 36 dBm and the power P L was measured at the load after the steady state was reached.…”

“…Then, a load pull simulation was performed for the output matching in order to determine the optimal impedance presented to the drain side so that the highest gain and output power can be obtained [2]. The impedances are simulated and plotted into the Smith chart in Fig.…”

“…In case of hybrid circuits, a single hardware can be reconfigured to serve several standards and applications. For example, a power amplifier can be configured to a high efficiency mode or a high linearity mode [2]. In case of integrated circuits, a reconfigurable IC is attractive since it can serve many applications as the reconfiguration can simply be carried out using the control pins of the chip to select the operating frequency or mode [3][4].…”

Design of GaN-based Microwave Components and Application to Novel High Power Reconfigurable Antennas

“…There has been some work on Tx/Rx module using GaN fox X-band [43], where three types of amplifiers (DA, HPA and LNA) were integrated on multi-layer low temperature co-fired ceramic (LTCC) substrates. In Figure Figure II.20: Simulated power added efficiency verses input power at different matching states [46] In [47], for the first time a novel technique on how to combine the More studies revealed that due to the drawbacks of GaAs MMIC HPA as low efficiency and limited output power level have made it not to be a competent candidate of power chips against the high efficiency of GaN MMICs technology [39].…”

“…Photograph of the fabricated amplifier[45] Figure II.14: Measured PAE versus output power[45] Figure II.15: Measured gain versus output power[45] In[46] using tunable capacitors in the input and output matching networks, a 2.45 GHz GaN HEMT operating class and frequency reconfigurable power amplifier is reported. Figure II.16 and Figure II.17 show, respectively, the concept of impedance matching conditions and a topology of the photograph of the proposed reconfigurable PA.…”