Cite as: Can Urol Assoc J 2014;8(1-2):e8-11. http://dx.doi.org/10.5489/cuaj.1261 Published online January 14, 2014. AbstractIntroduction: We evaluate the efficiency of α-adrenergic antagonists on stone clearance after extracorporeal shock wave lithotripsy (ESWL) in patients with lower ureteral stones. Methods: A total of 356 patients with solitary lower ureteral stones who underwent single ESWL sessions were divided into 2 groups. Group 1 received our standard medical therapy, and Group 2 was treated with 0.4 mg/day tamsulosin for a maximum of 2 weeks. All patients were re-evaluated with plain film radiography and ultrasound each week during the treatment period. A computed tomography scan was systematically performed 3 months after ESWL. Results: In total, 82 of the 170 patients in Group 1 (48.2%) and 144 of the 186 patients in Group 2 (77.4%) (p = 0.002) were stonefree. Among the patients with stones 10 to 15 mm in diameter, the stone-free rate was 38.4% in Group 1 and 77.1% in Group 2 (p = 0.003). Average stone expulsion time was 10.6 days and 8.4 days in Groups 1 and 2, respectively. Ureteral colic occurred in 40 patients (23.5%) in Group 1, but only in 10 patients (5.3%) in Group 2 (p = 0.043). The only side effect of tamsulosin was slight dizziness in 5 of the 186 patients in Group 2 (2.6%). Conclusion: Adjunctive therapy with α1-adrenergic antagonists after ESWL is more efficient than, and equally as safe as, lithotripsy alone to manage patients with lower ureteral stones. The adding of α-blockers is more reliable and helpful for stones with a large dimension, and can also decrease stone elimination time and episodes of ureteral colic.
This thesis demonstrates the feasibility of using gallium nitride (GaN) technology in reconfigurable RF systems. GaN-based varactor diodes and switch circuits are pursued as promising candidates for high-power/high-frequency applications. The first part is devoted to active GaN device development. Active components were realized using the Canadian National Research Council (NRC) GaN HEMTs process. Based on three process, such as, GaN150v0 (gate length of 0.15um), GaN500v1 and GaN500v2 (both with gate length of 0.5um), many varactor diodes with size different have been manufactured and characterized via DC and RF smallsignal and large-signal measurements. Then, the varactor diodes were modeled by This thesis research has been conducted as a collaboration between University of Rennes 1 through "l'Institut d'Electronique et de Télécommunications de Rennes (IETR)", and Carleton University through the "Department of Electronics (DOE)". This collaboration is created from the PhD cotutelle (joint) program offered by both institutions. DOE has the expertise in CAD for electronic circuit design, RF and microwave circuits, photonics and integrated circuit using semiconductor technologies including GaN technology. A group of researchers from Carleton University is deeply involved in developing of circuits based on GaN technology.
International audienceIn this article, a single-fed 4-panel 4 x 1 patch array antenna operating at 2.43 GHz with switched beam capability is proposed. The design allows the beam to be switched between 4 discrete directions giving 360 degrees coverage. The antenna beam is switched over the azimuth plane for phi=0 degrees, phi=90 degrees, phi=180 degrees, and phi=270 degrees. The beam control is achieved using GaN-based HEMT SPDT switches. Only 3 SPDT switches are integrated directly into the structure, allowing its nature to be electrically controlled over the desired 4 directions. Simulated and measured reflection coefficients and radiation patterns for the 4 cases are presented and discussed, showing good agreement. The antenna gain is around 3.8 dB including switches losses at 2.43 GHz
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