Design of GaN-based Microwave Components and Application to Novel High Power Reconfigurable Antennas

Abstract

This thesis demonstrates the feasibility of using gallium nitride (GaN) technology in reconfigurable RF systems. GaN-based varactor diodes and switch circuits are pursued as promising candidates for high-power/high-frequency applications. The first part is devoted to active GaN device development. Active components were realized using the Canadian National Research Council (NRC) GaN HEMTs process. Based on three process, such as, GaN150v0 (gate length of 0.15um), GaN500v1 and GaN500v2 (both with gate length of 0.5um), many varactor diodes with size different have been manufactured and characterized via DC and RF smallsignal and large-signal measurements. Then, the varactor diodes were modeled by This thesis research has been conducted as a collaboration between University of Rennes 1 through "l'Institut d'Electronique et de Télécommunications de Rennes (IETR)", and Carleton University through the "Department of Electronics (DOE)". This collaboration is created from the PhD cotutelle (joint) program offered by both institutions. DOE has the expertise in CAD for electronic circuit design, RF and microwave circuits, photonics and integrated circuit using semiconductor technologies including GaN technology. A group of researchers from Carleton University is deeply involved in developing of circuits based on GaN technology.

An Active Inductor and Tunable Bandpass Filter in GaN

“…The result is varactors with relatively low quality factors. Examples of varactors implemented using the GaN500 process can be viewed in [21].…”

“…21 shows the simulated filter passband bandwidth when tuned to 5 GHz. The simulated 3dB bandwidth is measured to be 25 MHz.…”