Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching

Yoo, In-Kyeong; Kang, Bo Soo; Ahn, Seung‐Eon; Lee, Chang Bum; Lee, Myoung-Jae; Park, Gyeong‐Su; Li, Xiang-Shu

doi:10.1109/tnano.2010.2041670

Cited by 30 publications

(9 citation statements)

References 19 publications

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“…However, when the CFs grow towards the cathode, they may pass 9 through the original grain boundaries to form new grain boundaries (blue non-vertical lines). Similar results can be also found in previous reports 19,24,25 . When the device is in O-S, due to interfacial exchange coupling between Co and NiO, EB will be established easily.…”

supporting

confidence: 93%

Full Electric Control of Exchange Bias at Room Temperature by Resistive Switching

Wei

et al. 2018

Advanced Materials

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Electric control of exchange bias (EB) is of vital importance in energy-efficient spintronics. Although many attempts have been made during the past decade, each has its own limitations for operation and thus falls short of full direct and reversible electrical control of EB at room temperature. Here, a novel approach is proposed by virtue of unipolar resistive switching to accomplish this task in a Si/SiO /Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in the high-resistance-state while negligible EB in the low-resistance state. Conductive filaments forming in the NiO layer and rupturing near the Co-NiO interface are considered to play dominant roles in determining the combined resistive switching and EB phenomena. This work paves a new way for designing multifunctional and nonvolatile magnetoelectric random access memory devices.

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supporting

confidence: 93%

Full Electric Control of Exchange Bias at Room Temperature by Resistive Switching

Wei

et al. 2018

Advanced Materials

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“…3(b), more physical insights can be obtained on the percolating conductive pathways. 24,29,115,116,132,[232][233][234] Figure 9 shows SEM images of a planar Ni/CuO/Ni cell. 115 As shown in Fig.…”

Section: What Happens In An Oxide During Unipolar Switching?mentioning

confidence: 99%

“…Figure 23 shows the creation of such defect structures due to RS. 234 Figure 23(a) shows cross-sectional TEM images of a pristine NiO cell; there are several grain boundaries, as indicated by the red lines. Following switching, many new grain boundaries are created, as indicated by the yellow lines in Fig.…”

Section: Importance Of Inhomogeneity and Statistical Physics Apprmentioning

confidence: 99%

Resistive switching phenomena: A review of statistical physics approaches

Lee

Noh

2015

Applied Physics Reviews

392

239

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Resistive switching (RS) phenomena are reversible changes in the metastable resistance state induced by external electric fields. After discovery $50 years ago, RS phenomena have attracted great attention due to their potential application in next-generation electrical devices. Considerable research has been performed to understand the physical mechanisms of RS and explore the feasibility and limits of such devices. There have also been several reviews on RS that attempt to explain the microscopic origins of how regions that were originally insulators can change into conductors. However, little attention has been paid to the most important factor in determining resistance: how conducting local regions are interconnected. Here, we provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field. We first classify RS phenomena according to their characteristic current-voltage curves: unipolar, bipolar, and threshold switchings. Second, we outline the microscopic origins of RS in oxides, focusing on the roles of oxygen vacancies: the effect of concentration, the mechanisms of channel formation and rupture, and the driving forces of oxygen vacancies. Third, we review RS studies from the perspective of statistical physics to understand connectivity change in RS phenomena. We discuss percolation model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS. Fourth, we review various switching-type conversion phenomena in RS: bipolarunipolar, memory-threshold, figure-of-eight, and counter-figure-of-eight conversions. Finally, we review several related technological issues, such as improvement in high resistance fluctuations, sneak-path problems, and multilevel switching problems. V

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“…In the case of interest to this Letter, RS is related to the formation and partial destruction of a nanoscale conducting filament (CF). The nature of the CF is different in different material systems, 3,4 and so are the conduction and switching properties. 1,[5][6][7] However, all these systems share some important features, involving the motion of ions and redox reactions, which form and destroy the CF during the set and reset transitions, respectively.…”

mentioning

confidence: 99%