Full Electric Control of Exchange Bias at Room Temperature by Resistive Switching

Wei, Lujun; Hu, Zhen-Zhong; Du, Guanxiang; Yuan, Yuan; Wang, Ji; Tu, Hongqing; You, Bo; Zhou, Shiming; Qu, Jiangtao; Liu, Hong Wei; Zheng, Rongkun; Hu, Yong

doi:10.1002/adma.201801885

Cited by 47 publications

(49 citation statements)

References 42 publications

(43 reference statements)

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“…The ON/OFF ratio achieves ≈10 5 . Note that an apparent high quality bipolar RS character is realized by adding a HfO x layer between CoO x and Pt electrode, which is different from previously reported unipolar CoO x and NiO x ‐based RRAM . It is because RS devices with HfO x dielectric layer generally show a bipolar switching behavior .…”

contrasting

confidence: 62%

“…Resistive random access memory (RRAM), which shows low and high resistance states (LRS and HRS) by the formation and rupture of conductive filaments in metal/insulator/metal sandwich structure, is supposed to be one of promising candidates for the next‐generation nonvolatile memories . Recently, the reversible control of magnetism in resistive switching (RS) structure with magnetic storage medium has been extensively explored . The spin transport is switched ON/OFF when the RRAM is at low/high resistance states .…”

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confidence: 99%

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Local Control of Exchange Bias by Resistive Switching

Wang

Sun

Zhou

et al. 2018

Physica Rapid Research Ltrs

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The local modulation of exchange bias in resistive switching structure Co/CoOx/HfOx/Pt is reported, where CoOx/HfOx serves as the storage medium and Co behaves as the bottom (positive) electrode. The stack shows the exchange bias effect for the coupling at the Co/CoOx interface at the high resistance state. The formation of metallic Co or Co‐rich CoOx conductive filaments in the CoOx layer at the low resistance state leads to the bi‐hysteresis loops, reflecting the manipulation of exchange bias at local positions, where the formation of Co‐based filaments and the Co layer just below the filaments have no pinning effect. Besides, an oxidation–reduction process occurs in the Co layer, producing the reversible variation of saturated magnetization for the high/low resistance states. The electrochemical mechanism accounts for both local manipulation of exchange bias and changeable saturated magnetization. This work provides a different avenue for designable memories and magneto‐electric coupling devices.

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confidence: 62%

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confidence: 99%

Local Control of Exchange Bias by Resistive Switching

Wang

Sun

Zhou

et al. 2018

Physica Rapid Research Ltrs

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“…In comparison to solid‐state resistive switching‐based electric control by redox reactions in an AFM oxide via a top gate, in the present geometry, a metal AFM is at the bottom while the FM layer is covered by a native oxide, both of which are manipulated via the top gate. In this geometry, the redox processes are decoupled from the AFM/FM interface, and in consequence, the electric manipulation becomes independent of the AFM properties.…”

Section: Resultsmentioning

confidence: 99%

“…In this study, temperature instead of voltage was used as a control parameter. First attempts to voltage‐control EB via ionic mechanisms involve topographically patterned elements consisting of a cobalt layer in contact with a CoO x or HfO x AFM layer that exhibits resistive switching . The voltage‐dependent EB is interpreted based on a resistive switching mechanism, involving the formation and rupture of conducting filaments in the AFM and associated dynamic atomistic rearrangement of the AFM/FM interface.…”

Section: Introductionmentioning

confidence: 99%

Nonvolatile Electric Control of Exchange Bias by a Redox Transformation of the Ferromagnetic Layer

Zehner

Huhnstock

Oswald

et al. 2019

Adv Elect Materials

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actuation devices. [1,2] The electric currentinduced switching of magnetization is one approach, but requires large spin polarized currents. For energy efficient operation, however, the involved dissipative electric currents should be minimal. The electric field control of magnetism is a promising low-power alternative, and increasing research efforts in this direction resulted in the discovery of various mechanisms in single-and two-phase multiferroics, magnetic semiconductors, and at gated metal surfaces allowing for voltage control of magnetic properties. [2,3] The exchange bias (EB), discovered decades ago, became an important property in modern thin-film magnetism, as it offers an elegant way to prepare thermally stable artificial domains and electrodes with a predefined macroscopic magnetization alignment. [4,5] The EB is manifested by a shift of the hysteresis curve of the ferromagnetic layer along the magnetic field axis and is based on a quantum mechanical exchange interaction occurring at the common interface between a thin ferromagnetic (FM) and antiferromagnetic (AFM) layer. EB thin films are extensively used to control the direction of magnetization in magnetic memories, spintronic, and magnetophoretic devices. [6] In the latter, for example, in-plane EB systems are utilized to generate artificial magnetic domain patterns and associated reconfigurable magnetic stray field landscapes, which can be used to locally guide the motion of magnetic micro-and nanoparticles. [7] Consequently, tailoring and control of EB has become a central objective in these research branches. Chemical, mechanical, thermal, and light ion bombardment-based techniques have been developed to tailor the EB, mainly by introducing irreversible material modifications at the AFM/ FM interface, for example, by changing the interface roughness or incorporating impurities. [8] The modification of the EB is not reversible for all of these methods. Moreover, most of them require an additional magnetic field and a sophisticated apparatus, such as vacuum equipment.The electric control of EB would provide an easily integrable alternative, ideally allowing for operando and reversible EB modification. Indeed, reversible control can be achieved by electric current-induced torque in the AFM layer, but Joule heating limits the energy-efficiency. [9] Alternative low power mechanisms for voltage-control of EB are therefore of great Electric manipulation of exchange bias (EB) systems is highly attractive for the development of modern spintronic and magnetophoretic devices. To date, electric control of the EB has mainly been based on multiferroic or resistive switching behavior in specific antiferromagnets, which limits the material choice and accessible EB states. In addition, the effects are mostly volatile, requiring constant voltage application. The continuous and nonvolatile tuning of the EB via electrochemical manipulation of the ferromagnetic layer is presented. In FeO x /Fe/IrMn systems, large changes in the EB field of fully shifted magneti...

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“…Recently, it has been found that the perpendicular exchange coupling across the ferromagnetic/antiferromagnetic interface can influence both the coercivity and the PMA of a ferromagnetic sublayer in permalloy/CoO,22 CoPt/CoO,23 Co/CoO,24,25 and Fe/Mn26 systems. This provides a powerful platform for tailoring PMA as well as realizing emergent voltage‐controlled functionalities 27,28. In this work, interfacial exchange coupling of magnetic moments between ferromagnetic metal and antiferromagnetic oxides is used as an extra source to stabilize the perpendicular magnetic anisotropy.…”

Section: Introductionmentioning

confidence: 99%

Electrical Control of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque‐Induced Magnetization Switching

Huang

Dong

Zhao

et al. 2019

Adv Elect Materials

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Voltage‐driven oxygen ion migration in ferromagnetic metal/oxide heterostructures offers a highly effective means to tailor emergent interfacial functionalities. In heterojunctions with a core structure of Pt/Co/CoO/TiO2 (TaOx), it is demonstrated that exchange coupling of magnetic moments across the Co/CoO interface provides an extra source to stabilize the perpendicular magnetic anisotropy (PMA). Moreover, the strength of this interfacial coupling can be reversibly controlled through voltage‐driven oxygen ion migration at the Co/CoO interface, resulting in electrical‐field‐controllable PMA. In combination with the spin current generated from Pt, it is revealed that the spin‐orbit torque (SOT) switching of the perpendicular magnetization of Co can be turned ON/OFF by electrical field. Tunable PMA and SOT switching makes heavy metal/ferromagnetic metal/antiferromagnetic oxide heterojunctions a promising candidate to future voltage‐controlled, ultralow‐power, and high‐density spintronics devices.

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Full Electric Control of Exchange Bias at Room Temperature by Resistive Switching

Cited by 47 publications

References 42 publications

Local Control of Exchange Bias by Resistive Switching

Local Control of Exchange Bias by Resistive Switching

Nonvolatile Electric Control of Exchange Bias by a Redox Transformation of the Ferromagnetic Layer

Electrical Control of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque‐Induced Magnetization Switching

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