Forward and reverse bias current–voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer

In order to see the effect of Bi-doped PVA interfacial layer on electrical characteristics, both Au/n-Si (MS) and Au/Bidoped PVA/n-Si (MPS) type Schottky barrier diodes (SBDs) were fabricated, and their main electrical parameters were investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements, in dark and under illumination at room temperature. Forward bias semi-logarithmic I-V plots of these SBDs show two distinct linear regions, with different slopes in the low and intermediate voltage region. Such behavior in I-V plots was explained by two parallel diodes model. Experimental results show that the ideality factor (n), barrier height (φ b ), series and shunt resistances (R s and R sh ), and the density of interface states/traps (N ss ) are strong functions of illumination level and applied bias voltage. The R s values were determined from the I-V characteristics, by using both Ohm's law. The energy distribution profile of N ss was also obtained from the forward bias I-V characteristics, by taking into account voltage dependent barrier height (φ e ) and ideality factor (n). It was found that Bi-doped PVA layer lead to a considerable decrease in the leakage current, R s and N ss and increase in R sh and rectifier rate (RR=I F /I R ). In conclusion, a thin Bi-doped PVA interfacial layer, considerably improved the diode performance, both in dark and under illumination.account voltage dependent barrier height (φ B (V)) and ideality factor n(V). Experimental results show that the Bi-doped interfacial PVA layer led to considerable decrease in the leakage current, R s and N ss and led to increase in R sh and rectifier rate (RR=I F /I R ). So, it can be said that Bi-doped PVA considerably improved the performance of SBD. Experimental ProcedureFor the fabrication of Au/PVA (Bi-doped)/n-Si (MPS), (phosphor doped) single crystal silicon with surface orientation, 350 μm thickness and 0.7 Ω.cm resistivity was used. Si wafer was degreased in organic solution of peroxide-ammoniac solution in 10 minutes, and then etched in a sequence of H 2 O+HCl solution, and finally quenched in de-ionized water resistivity of 18 MΩ.cm for a prolonged time. Preceding each cleaning step, the wafer was rinsed thoroughly in de-ionized water. Immediately after surface cleaning, high purity (99.999%) gold (Au), with a thickness of ~2000Å, was thermally evaporated onto the whole back side of Si wafer, in a pressure about 10 -6 Torr in high vacuum metal evaporation system. In order to perform a low resistivity ohmic back metal contact, n-Si wafer was sintered at about 450°C for 5 min in N 2 atmosphere.Immediately after the formation of ohmic contact, 0.5 g of bismuth acetate was mixed with 50 g of polyvinyl Alcohol (PVA), molecular Citation: Alialy S, Tecimer H, Uslu H, Altındal Ş (2013) A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA

show abstract

“…Similar results have been reported in the literature for MS and MIS/MPS types SBDs in dark and illumination condition [28][29][30][31][32].…”

Section: Effects Of Illumination On the C-v And G/ω-v Characteristicssupporting

confidence: 90%

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

Alialy¹,

Tecimer²,

Uslu³

et al. 2017

J Nanomed Nanotechnol

View full text Add to dashboard Cite

show abstract

“…Main parameters, such as I 0 , n and Φ B0 , of the diode were calculated as mentioned and given in Table 3. Obtained values for I 0 , n and Φ B0 parameters are acceptable compared with the similar type structures in the literature [18][19][20][21][22]. It is clearly seen in Fig.…”

Section: Characterization Of Main Electrical Properties Of Au/ Plimmasupporting

confidence: 80%

Synthesis and characterization of poly (linoleic acid)-g-poly(methyl methacrylate) graft copolymer with applying in Au/PLiMMA/n-Si diode

Çulcu

Allı

et al. 2015

Materials Science in Semiconductor Processing

Self Cite

View full text Add to dashboard Cite

“…Due to high dielectric constant, SiO 2 , TiO 2 , and SnO 2 , have been used as an interfacial layers between metal and semiconductor [30][31][32]. These type of material systems are called as metal-interfacial layer-semiconductor (MIS) diodes.…”

Section: Temperature Dependent Current-voltage Characteristicsmentioning

confidence: 99%

“…Altuntas ß et al [31] investigated the temperature-dependent forward and reverse-bias I-V characteristics of the Au/SiO 2 /n-GaAs (MIS) Schottky diode and showed that the obtained ideality factor values increase with decreasing temperature, while zero-bias barrier height values decrease with decreasing temperature. Gökçen et al [32] studied the effects of interfacial insulator layer and series resistance on the room temperature forward and reverse bias I-V characteristics of the SBDs with and without SnO 2 insulator layer. They observed that the non-ideal forward bias I-V behavior was exhibited in both MS and MIS SBDs.…”

Section: Temperature Dependent Current-voltage Characteristicsmentioning

confidence: 99%

The study on characterizations of SrTiO3 thin films with different growth temperatures

Kınacı

Akin

Durukan

et al. 2014

Superlattices and Microstructures

View full text Add to dashboard Cite

Forward and reverse bias current–voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer

Cited by 50 publications

References 17 publications

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

Synthesis and characterization of poly (linoleic acid)-g-poly(methyl methacrylate) graft copolymer with applying in Au/PLiMMA/n-Si diode

The study on characterizations of SrTiO3 thin films with different growth temperatures

Contact Info

Product

Resources

About