Forming-free high-endurance Al/ZnO/Al memristor fabricated by dual ion beam sputtering

Kumar, Amitesh; Das, Mangal; Garg, Vivek; Sengar, Brajendra S.; Htay, Myo Than; Kumar, Shailendra; Kranti, Abhinav; Mukherjee, Shaibal

doi:10.1063/1.4989802

Cited by 84 publications

(71 citation statements)

References 31 publications

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“…Hence, the industry is focused on understanding, analyzing, and discovering the NDR effect along with resistive switching. Several reports have been published on NDR with ZnO [ 17 ], polymers, graphene oxide, nanocomposites [ 1 , 17 , 18 , 19 , 20 , 21 ], other transition metal oxides (TiO x [ 22 ], and FeO x [ 23 ]). However, the NDR effect is rarely reported in CuO.…”

Section: Introductionmentioning

confidence: 99%

Memristive Devices from CuO Nanoparticles

et al. 2020

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Memristive systems can provide a novel strategy to conquer the von Neumann bottleneck by evaluating information where data are located in situ. To meet the rising of artificial neural network (ANN) demand, the implementation of memristor arrays capable of performing matrix multiplication requires highly reproducible devices with low variability and high reliability. Hence, we present an Ag/CuO/SiO2/p-Si heterostructure device that exhibits both resistive switching (RS) and negative differential resistance (NDR). The memristor device was fabricated on p-Si and Indium Tin Oxide (ITO) substrates via cost-effective ultra-spray pyrolysis (USP) method. The quality of CuO nanoparticles was recognized by studying Raman spectroscopy. The topology information was obtained by scanning electron microscopy. The resistive switching and negative differential resistance were measured from current–voltage characteristics. The results were then compared with the Ag/CuO/ITO device to understand the role of native oxide. The interface barrier and traps associated with the defects in the native silicon oxide limited the current in the negative cycle. The barrier confined the filament rupture and reduced the reset variability. Reset was primarily influenced by the filament rupture and detrapping in the native oxide that facilitated smooth reset and NDR in the device. The resistive switching originated from traps in the localized states of amorphous CuO. The set process was mainly dominated by the trap-controlled space-charge-limited; this led to a transition into a Poole–Frenkel conduction. This research opens up new possibilities to improve the switching parameters and promote the application of RS along with NDR.

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Section: Introductionmentioning

confidence: 99%

Memristive Devices from CuO Nanoparticles

et al. 2020

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“…The active organic material switches from the low conduction state to high conduction state at a particular threshold switching voltage under the applied electric field . The variation in electrical conduction state of organic materials can be considered as electrically ON and OFF phenomena commonly used for conventional binary data storage devices . In recent years, numerous memory devices based on organic materials including biomaterials such as enzymes, natural polymers like silk fibroin synthetic materials like organic conjugated polymers, metal‐organic ligand coordination complexes, and small organic molecules have been reported.…”

Section: Introductionmentioning

confidence: 99%

Benzoselenadiazole‐Based Conjugated Molecules: Active Switching Layers with Nanofibrous Morphology for Nonvolatile Organic Resistive Memory Devices

Jadhav

Kumar

et al. 2020

ChemPlusChem

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In this work, two symmetrical donor-acceptor-donor (D-A-D) type benzoselenadiazole (BSeD)-based π-conjugated molecules were synthesized and employed as an active switching layer for non-volatile data storage applications. BSeD-based derivatives with different donor units attached through common vinylene linkers showed different electrical and optical properties. 4,7-Di ((E)-styryl)benzo[c][2,1,3]selenadiazole (DSBSeD) and 4,7-bis((E)-4-methoxystyryl)benzo[c][2,1,3]selenadiazole (DMBSeD) are sandwiched between gallium-doped ZnO (GZO) and metal aluminum electrodes respectively through solution-processed spin-coating method. The solution-processed nanofibrous switching layer containing the DMBSeD-based memory device showed reliable memory characteristics in terms of write and erase operations with low SET voltage than the randomaggregated DSBSeD-based device. The nanofibrous molecular morphology of switching layer overcomes the interfacial hole transport energy barrier at the interface of the DMBSeD thinfilm and the bottom GZO electrode. The memory device GZO/ DMBSeD/Al based on nanofibrous switching layers shows switching characteristics at compliance current of 10 mA with V set = 0.79 V and V reset = À 0.55 V. This work will be beneficial for the rational design of advanced next-generation organic memory devices by controlling the nanostructured morphology of active organic switching layer for enhanced charge-transfer phenomenon.[a] R.

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“…The ReRAM basic structure consists of a metal–insulator–metal (MIM) stack, in which an insulator layer responsible for resistive switching is sandwiched between two electrodes. For the metal‐oxide based bipolar ReRAMs, HfO 2 , TaO x , TiO 2 , and ZnO are among the most studied and preferred switching layers. For the electrodes, an asymmetrical configuration is employed, where one is an oxidizing electrode with a low work function (W, Ta, Ti, and Hf) and the other has rather higher work function and lower chemical reactivity (Pt, TiN,…) .…”

Section: Introductionmentioning

confidence: 99%

Switching Kinetics Control of W‐Based ReRAM Cells in Transient Operation by Interface Engineering

Shahrabi

Giovinazzo

Hadad

et al. 2019

Adv Elect Materials

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Tungsten (W) is one of the most promising materials to be used in resistive random‐access memory electrodes due to its low work function and compatibility with semiconductors, which raises the possibility of device integration, scalability, and low power consumption. However, W has multiple oxidation states that affect device reliability, due to the formation of semistable oxides at the switching interface. W chemical interaction is modulated through the insertion of Al2O3 or Ti interfacial layers. The time‐dependent switching kinetics are investigated in transient Set/Reset operations. It is observed that a compact and stoichiometric atomic‐layer‐deposited Al2O3 barrier layer completely prevents W oxidation, resulting in a sharp current transient. The use of a sputtered Ti buffer layer allows a partial W oxidation, defining a tunable high‐resistance state by pulse rise time control. Notable improvements in endurance, power consumption, resistance state stabilization, and cycle‐to‐cycle and device‐to‐device variability are reported. Switching kinetics and conductive nanofilament evolution are studied in detail to understand the microscopic effect of the interface modifications. The tunability of multi‐HRS states by pulse timing control in Pt/HfO2/Ti/W is in the interest of network and brain‐inspired computing applications, adding a degree of freedom in the modulation of its resistance.

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Forming-free high-endurance Al/ZnO/Al memristor fabricated by dual ion beam sputtering

Cited by 84 publications

References 31 publications

Memristive Devices from CuO Nanoparticles

Memristive Devices from CuO Nanoparticles

Benzoselenadiazole‐Based Conjugated Molecules: Active Switching Layers with Nanofibrous Morphology for Nonvolatile Organic Resistive Memory Devices

Switching Kinetics Control of W‐Based ReRAM Cells in Transient Operation by Interface Engineering

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