Benzoselenadiazole‐Based Conjugated Molecules: Active Switching Layers with Nanofibrous Morphology for Nonvolatile Organic Resistive Memory Devices

Abstract

In this work, two symmetrical donor-acceptor-donor (D-A-D) type benzoselenadiazole (BSeD)-based π-conjugated molecules were synthesized and employed as an active switching layer for non-volatile data storage applications. BSeD-based derivatives with different donor units attached through common vinylene linkers showed different electrical and optical properties. 4,7-Di ((E)-styryl)benzo[c][2,1,3]selenadiazole (DSBSeD) and 4,7-bis((E)-4-methoxystyryl)benzo[c][2,1,3]selenadiazole (DMBSeD) are sandwiched between gallium-doped ZnO (GZO) and metal aluminum electrodes respectively through solution-processed spin-coating method. The solution-processed nanofibrous switching layer containing the DMBSeD-based memory device showed reliable memory characteristics in terms of write and erase operations with low SET voltage than the randomaggregated DSBSeD-based device. The nanofibrous molecular morphology of switching layer overcomes the interfacial hole transport energy barrier at the interface of the DMBSeD thinfilm and the bottom GZO electrode. The memory device GZO/ DMBSeD/Al based on nanofibrous switching layers shows switching characteristics at compliance current of 10 mA with V set = 0.79 V and V reset = À 0.55 V. This work will be beneficial for the rational design of advanced next-generation organic memory devices by controlling the nanostructured morphology of active organic switching layer for enhanced charge-transfer phenomenon.[a] R.

Strategical design and synthesis of D–A–D-based quinolines for improved WORM memory performance

“…Furthermore, the hole injection barrier is smaller for the compounds 14a–b than 14c–d making the former devices more likely to have lower threshold voltages. 34…”

“…Furthermore, the hole injection barrier is smaller for the compounds 14a-b than 14c-d making the former devices more likely to have lower threshold voltages. 34 The different mechanisms prevailing in the literature are considered for the switching behavior of organic compounds. Several pieces of literature rule out the possibility of filamentary conduction as the mechanism behind the resistive switching of organic memory devices with the simple two-terminal architecture.…”

Tailoring Thiazole Decorated Polymer with Benzoselenadiazole for Enhanced SO2 Sensing

“…7,13 Moreover, the strong polarizability of Se provides an electrophilic center that allows weak interactions with other molecules. 14 The π−π interaction between the polymeric chain also accelerates the charge carrier mobility, leading to increased sensitivity toward targeted molecules. 7,15 Today, there is significant concern about the impact of industrial development and the release of large amounts of toxic gases and volatile organic compounds (VOCs) into the environment.…”

“…They used a C[4]-DT LB fabricated sensor for the sensitive and selective detection of DCM . Additionally, incorporating a benzoselenadiazole ring in the CPs promotes electron-deficient behavior and decreases the band gap of the CPs. , Moreover, the strong polarizability of Se provides an electrophilic center that allows weak interactions with other molecules . The π–π interaction between the polymeric chain also accelerates the charge carrier mobility, leading to increased sensitivity toward targeted molecules. , …”

Composition and Surface Morphology Invariant High On–Off Ratio from an Organic Memristor

“…So, HRS-to-LRS switching is considered as 0 to 1 in binary conversion. Different types of organic materials have been used as the active material for RRAM devices, for example, natural polymers, organic conjugated polymers, metal–organic complexes, small molecules, − and so forth. Polymers with an azobenzene group are promising candidates for resistive switching .…”