Strategical design and synthesis of D–A–D-based quinolines for improved WORM memory performance

Angela, Varghese Maria; Harshini, Deivendran; Imran, P.K.M.; Nagarajan, Samuthira

doi:10.1039/d2tc05238e

Cited by 7 publications

(12 citation statements)

References 38 publications

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“…It ensues in the switching from the HRS to the LRS. Thus, the compounds exhibit nonvolatile WORM memory property due to the steady charge transfer process and reserved charges in the traps, prolonging the ON state for longer …”

Section: Resultsmentioning

confidence: 99%

“…Thus, the compounds exhibit nonvolatile WORM memory property due to the steady charge transfer process and reserved charges in the traps, prolonging the ON state for longer. 45 The influence of electron-withdrawing strengths on memory properties has also been investigated for compounds 5d−f. Despite having an A-π-D-π-A architecture and four terminalaccepting groups for all three molecules, the strength of the electron-accepting groups varied from one compound to the other.…”

Section: Acs Applied Materials and Interfaces Wwwacsamiorgmentioning

confidence: 99%

“…They have drawn a lot of attention in this research area because of their distinctive qualities, such as their efficient charge transfer and ability to alter the highest occupied molecular orbital (HOMO)−lowest unoccupied molecular orbital (LUMO) energy levels of the compounds. 22 Direct control of the electrical switching properties is possible by modifying the D− A arrangement, molecular coplanarity, strength of donor/ acceptor groups, and spacer linkage. 11 Cann et al 23 reported the effects of ethynyl spacers between D−A systems on structural properties which could affect the molecular packing and solubility of the compounds.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Donor–acceptor (D–A)-based systems are critical for fabricating nonvolatile resistive memory devices. They have drawn a lot of attention in this research area because of their distinctive qualities, such as their efficient charge transfer and ability to alter the highest occupied molecular orbital (HOMO)–lowest unoccupied molecular orbital (LUMO) energy levels of the compounds . Direct control of the electrical switching properties is possible by modifying the D–A arrangement, molecular coplanarity, strength of donor/acceptor groups, and spacer linkage .…”

Section: Introductionmentioning

confidence: 99%

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Tailoring the Resistive Switching WORM Memory Behavior of Functionalized Bis(triphenylamine)

Gayathri

Angela

Devibala

et al. 2023

ACS Appl. Mater. Interfaces

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To better understand the structure–property relationship and the significance of the donor–acceptor (D–A) system in resistive memory devices, a series of new organic small molecules with A-π-D-π-A- and D-π-D-π-D-based architecture comprising a bis(triphenylamine) core unit and ethynyl-linked electron donor/acceptor arms were designed and synthesized. The devices with A-π-D-π-A structures exhibited write-once-read-many memory behavior with a good retention time of 1000 s while those based on D-π-D-π-D molecules presented only conductor property. The compound with nitrophenyl substitution resulted in a higher ON/OFF current ratio of 104, and the fluorophenyl substitution exhibited the lowest threshold voltage of −1.19 V. Solubility of the compounds in common organic solvents suggests that they are promising candidates for economic solution-processable techniques. Density functional theory calculations were used to envision the frontier molecular orbitals and to support the proposed resistive switching mechanisms. It is inferred that the presence of donor/acceptor substituents has a significant impact on the highest occupied molecular orbital–lowest unoccupied molecular orbital energy levels of the molecules, which affects their memory-switching behavior and thus suggests that a D–A architecture is ideal for memory device resistance switching characteristics.

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Section: Resultsmentioning

confidence: 99%

Section: Acs Applied Materials and Interfaces Wwwacsamiorgmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Tailoring the Resistive Switching WORM Memory Behavior of Functionalized Bis(triphenylamine)

Gayathri

Angela

Devibala

et al. 2023

ACS Appl. Mater. Interfaces

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“…Thus, functionalization of the PN backbone with electronically influencing substituents and linkers can improve the device's performance. Triarylamines (TAA) have unique self-assembly, good electron-donating and hole-transporting properties, 19 and low ionization potential, which makes them more promising for OFETs. Recently, several TAA-based compounds have demonstrated mobility exceeding 1 cm 2 V −1 s −1 .…”

Section: Introductionmentioning

confidence: 99%

Acetylene bridged alkoxyphenanthrene and triarylamine-based triads for low threshold voltage with high mobility OFETs

Balambiga

Devibala

Harshini

et al. 2023

Mater. Chem. Front.

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Design of Triphenylamine‐based D‐π‐A Systems for Efficient Ternary WORM Memory Devices

Gayathri,

Akshaya,

Imran

et al. 2024

Chemistry A European J

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The impact of various substituent moieties on the molecular framework of a conjugated D‐A system in resistive switching memory property has been scrutinized through an array of novel D‐π‐A molecules. The synthesized molecules with triphenylamine (TPA) as the electron donor and dicyanovinylindanone (IC) as the electron acceptor demonstrated substantial non‐volatile WORM (Write‐Once Read‐Many) memory behaviour with appreciable ON/OFF current ratios up to 105 and a lowest recorded threshold voltage of ‐0.80 V. The well‐balanced combination of these potent electron donating and accepting units culminated in exceptional intramolecular charge transfer interactions and minimal band gap values (1.82‐2.31 eV) for the molecules, as demonstrated by photophysical and electrochemical investigations. These factors, coupled with the thin‐film morphological studies, corroborated the superior performance of the fabricated devices. A longer retention time of 2000s and an endurance of 100 cycles mark the substantial stability of the memory devices. Moreover, conversion from binary to ternary WORM memory was achieved by the effective tuning of the electronic properties of the D‐A systems by various substituent moieties. Molecular simulation studies revealed that the resistive switching phenomenon arises from a synergistic interplay of charge transfer and charge trapping processes within these D‐A systems.

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Strategical design and synthesis of D–A–D-based quinolines for improved WORM memory performance

Abstract: A series of D-A-D architectured molecules with quinoline as the central core and triarylamines (TAA) at both terminals were synthesized and studied for their memory performance. The photophysical studies exhibited...

Cited by 7 publications

References 38 publications

Tailoring the Resistive Switching WORM Memory Behavior of Functionalized Bis(triphenylamine)

Tailoring the Resistive Switching WORM Memory Behavior of Functionalized Bis(triphenylamine)

Acetylene bridged alkoxyphenanthrene and triarylamine-based triads for low threshold voltage with high mobility OFETs

Design of Triphenylamine‐based D‐π‐A Systems for Efficient Ternary WORM Memory Devices

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