Solution-processable organic semiconductors have attracted great attention in recent years, because of their performance and reliability in potential applications. Here, we report the solution processable donor-acceptor (DÀ A) conjugated molecules comprised of aroylbenzoate as acceptor, triarylamine or methoxyphenyl groups as donor and ethynyl spacer. Molecules with triarylamine donor exhibited strong absorption at 350-380 nm. HOMO levels around 5.5 eV ensures low barrier for hole injection. Optimized geometry and charge distribution over the molecules are visualized by density functional theory (DFT). Organic field effect transistors of these molecules are fabricated with bottom gate-top contact configuration. The devices exhibited charge carrier mobility up to 2.16 × 10 À 3 cm 2 V -1 s -1 and ON/OFF of 10 4 with low threshold voltage of À 3.2 V.
The latest progress on semiconducting applications of hexaarylbenzene is reviewed, including a fundamental overview of geometry, synthetic methods, structure-property relationship, design strategies and electronic applications in OFET, OLED and OPV.
Highly π-extended butterfly-shaped triarylamine dyads with aryleneethynylene spacer were constructed using an efficient synthetic route. These aryleneethynylenebridged dyads are highly fluorescent and exhibited high HOMO levels, and low bandgaps, which are suitable for high-performance p-type OFETs. The field-effect transistors were fabricated through a solution-processable method and exhibited promising p-type performance with fieldeffect mobility up to 4.3 cm 2 /Vs and high I on/off of 10 8 under ambient conditions.
To better understand the structure–property relationship
and the significance of the donor–acceptor (D–A) system
in resistive memory devices, a series of new organic small molecules
with A-π-D-π-A- and D-π-D-π-D-based architecture
comprising a bis(triphenylamine) core unit and ethynyl-linked electron
donor/acceptor arms were designed and synthesized. The devices with
A-π-D-π-A structures exhibited write-once-read-many memory
behavior with a good retention time of 1000 s while those based on
D-π-D-π-D molecules presented only conductor property.
The compound with nitrophenyl substitution resulted in a higher ON/OFF
current ratio of 104, and the fluorophenyl substitution
exhibited the lowest threshold voltage of −1.19 V. Solubility
of the compounds in common organic solvents suggests that they are
promising candidates for economic solution-processable techniques.
Density functional theory calculations were used to envision the frontier
molecular orbitals and to support the proposed resistive switching
mechanisms. It is inferred that the presence of donor/acceptor substituents
has a significant impact on the highest occupied molecular orbital–lowest
unoccupied molecular orbital energy levels of the molecules, which
affects their memory-switching behavior and thus suggests that a D–A
architecture is ideal for memory device resistance switching characteristics.
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