2022
DOI: 10.1021/acsaelm.1c01234
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Composition and Surface Morphology Invariant High On–Off Ratio from an Organic Memristor

Abstract: Material composition plays a crucial role in the device performance; thus, nonvolatile memory devices from a small molecule named 5-mercapto-1-methyl tetrazole (MMT) in an insulating polymer matrix of poly­(4-vinyl pyridine) (PVP) were fabricated. The composition of the active material in the device was varied to observe its influence on the device’s electronic properties. The device with a more or less weight ratio of MMT has a much smoother surface morphology, whereas when the contributions of MMT and PVP we… Show more

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Cited by 12 publications
(10 citation statements)
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“…The large RMS will not only increase the contact resistance between the top electrode and thin film, but impede charge injection and transfer between the top and bottom electrodes. [ 34 ] In Figure 3b, the NIPy molecules assemble into flat cuboid shapes, orderly stacking along with a particular orientation. This performance is related to the outstanding crystallinity as PXRD demonstrates.…”
Section: Resultsmentioning
confidence: 99%
“…The large RMS will not only increase the contact resistance between the top electrode and thin film, but impede charge injection and transfer between the top and bottom electrodes. [ 34 ] In Figure 3b, the NIPy molecules assemble into flat cuboid shapes, orderly stacking along with a particular orientation. This performance is related to the outstanding crystallinity as PXRD demonstrates.…”
Section: Resultsmentioning
confidence: 99%
“…The ITO-coated glass substrates were etched and cleaned by following the standard protocol described in our previous work. 21 Typically, the ITO was etched by zinc dust and concentrated hydrochloric acid to get a thin strip in the middle of the substrate. The etched substrates were cleaned with a soap solution and then ultrasonicated three times for 15 minutes, each using acetone followed by methanol and deionized water.…”
Section: Methodsmentioning
confidence: 99%
“…The DC sweeping data can be interpreted in double logarithm scale to analyze the conduction mechanisms. 98 For example, in the Fig. 4e, the DC sweeping current-voltage curves from an Ag/ZnO/ITO memristor was plotted in double logarithmic coordinates during the SET process.…”
Section: I-v DC Sweepingmentioning
confidence: 99%