Formation of pnp bipolar structure by thermal donors in nitrogen-containing p-type Czochralski silicon wafers

Abstract

Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects

Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing

“…The mechanism of N-doping on oxygen precipitation in lightly doped CZ-Si has been well documented [7][8][9][10][11][12], about which a short review is addressed as following. Generally, it is believed that N-N pairs are formed in NCZ-Si approximately at the melting temperature [20].…”

“…In this case, enhancing oxygen precipitation in heavily P-doped CZ-Si becomes necessary. Up to the present time, it is well documented that nitrogen co-doping is an effective pathway to enhance oxygen precipitation in CZ-Si [7][8][9][10][11][12]. Then, whether this scenario is also the case for heavily P-doped CZ-Si it is an interesting issue to be investigated.…”

Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

“…It has been well accepted that nitrogen doping can enhance oxygen precipitation and thus improve the IG capability of Cz-Si wafers. The IG structures for NCZ-Si wafer could be easily achieved by high-low-high temperature (Hi-Lo-Hi) three-step anneal [14], or by hightemperature anneal ramping-up from low temperature [15] or even by single-step high-temperature anneal [16]. Shimura et al [17] have reported that tiny oxygen precipitates might exist in the oxygen out-diffusion zone of NCZ-Si after Hi-Lo-Hi treatments, which would affect the quality of DZ.…”

Crystal growth and oxygen precipitation behavior of 300mm nitrogen-doped Czochralski silicon

“…It has been well proved that the doping of nitrogen into Czochralski (CZ) silicon results in manifold advantageous effects as follows: (1) reducing the size of voids in the silicon so that the voids can be annihilated at lower temperature [1]; (2) enhancing oxygen precipitation and therefore the intrinsic gettering capability [2][3][4][5]; (3) increasing the mechanical strength of the CZ silicon wafer, which is beneficial in reducing the warpage of the wafer during device processing [6,7]. The contemporary advanced device processes that adopt the CZ silicon wafers with diameters of 200 mm and above are moving towards low initial oxygen concentration ([O i ]) and thermal budgets.…”