Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose

Morehead, F. F.; Crowder, B. L.; Title, R. S.

doi:10.1063/1.1661223

Cited by 128 publications

(27 citation statements)

References 10 publications

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“…Below ϳ200°C, the damage accumulation from light or medium mass ions results in the formation of an amorphous layer at sufficiently high doses, while above this temperature, the crystalline-to-amorphous transformation does not take place up to arbitrarily high doses. 1 High dose implantation has been used to synthesize a variety of compounds in silicon including a buried oxide layer and a buried nitride layer for silicon-on-insulator ͑SOI͒ device applications. Ion implantation at elevated temperatures provides a possibility for exploring damage-related phenomena at very high doses.…”

Section: Introductionmentioning

confidence: 99%

Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures: Evidence of ion beam induced annealing

Souza

Suprun-Belevich

Boudinov

et al. 2001

Journal of Applied Physics

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The accumulation of damage and the development of mechanical strain in crystalline Si ͑c-Si͒ by O and N ion implantation to doses up to 4ϫ10 17 cm Ϫ2 at elevated temperatures have been studied using Rutherford backscattering spectrometry and high resolution x-ray diffraction. The implantation of O or N ions at high temperatures produces two distinct layers in the implanted c-Si: ͑i͒ a practically damage-free layer extending from the surface up to Ӎ half of the depth of the mean projected range (R p ) and presenting negative strain ͑of contraction͒; and ͑ii͒ a heavily damaged layer located around and ahead of the R p with no significant strain. Both the damage distribution and the magnitude of the strain were found to be dependent on the ion species implanted. We proposed that besides the spatial separation of Frenkel pair defects due to the mechanics of the collision processes and the intensive dynamic annealing, an ion beam induced annealing process also participate in the formation of the near-surface damage-free layer during high temperature implantation of c-Si.

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Section: Introductionmentioning

confidence: 99%

Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures: Evidence of ion beam induced annealing

Souza

Suprun-Belevich

Boudinov

et al. 2001

Journal of Applied Physics

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“…The form of the dependence Ф с (T) completely coincides with the respective experimental dependence Ф с (T) [12,13]. Thus, we have a parametric function…”

Section: Formation Of Fluctuons Under Ion Irradiationmentioning

confidence: 89%

“…These parameters are readily found through comparison with the experiment [12,13]. It is evident from Fig.…”

Section: Formation Of Fluctuons Under Ion Irradiationmentioning

confidence: 95%

Electronic theory of irradiation-induced disoerdering and annealing in semiconductors

Mamadalimov

Оксенгендлер²,

Turaeva³

2006

Russ Phys J

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A new model of irradiation-induced disordering of semiconductors is proposed. According to this model, the disordered regions capable of self-annealing are stabilized by self-localized electronic excitations (electrons, holes, excitons). Pulsed annealing of these regions occurs through recombination of the electronic stoppers and dispersal of disordered regions thus takes place. This model agrees well with the experiments on amorphisation and laser pulse annealing.

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“…Hot implantation is a wellknown process that has been extensively studied in the past [17]. The physical mechanism of the reduction of substrate amorphization relies on controlling the damage accumulation by increasing the implant temperature during implant.…”

Section: Contact Engineeringmentioning

confidence: 99%

Advanced CMOS devices: Challenges and implant solutions

Colombeau

Guo

Gossmann

et al. 2013

Physica Status Solidi (a)

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In this paper, we first review the trends for advanced CMOS devices in terms of architectures and scalability. The paper highlights the key process challenges for planar MOSFET and FinFET device technologies. We emphasize the need for advanced implant solutions to enable device scaling and performance as well as variability improvement. Especially, we discuss the latest damage engineering solutions as well as materials modification techniques (e.g., contact and strain engineering) to reduce leakage, improve drive current and process margin with reduced variability. Finally, we briefly discuss the implications and new challenges coming from novel channel material devices (e.g., silicon-germanium, germanium, and III-V).

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Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose

Cited by 128 publications

References 10 publications

Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures: Evidence of ion beam induced annealing

Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures: Evidence of ion beam induced annealing

Electronic theory of irradiation-induced disoerdering and annealing in semiconductors

Advanced CMOS devices: Challenges and implant solutions

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