An axial EPH spectrum has been observed for the holes that result when Nb is substituted for Mo in MoS2. From the values of the g tensor it is determined that the holes are in a d»2 band into which the spin-orbit interaction admixes some d"» and d"» orbitals. The EPH results are discussed in terms of the various energy-band structures that have been proposed for MoS2. The data are found to be consistent with the band structure suggested
The dose (fluence) of 200-keV boron, phosphorous, and antimony ions required to produce a continuous amorphous layer in silicon is determined as a function of target temperature. EPR measurements are used to monitor the process which is also then related to annealing effectiveness. The continuous amorphous layer recrystallizes at 550°C, after which only the implanted ions within that layer are completely electrically active. Carrier concentration profiles indicate the position of the amorphous layer and allow an approximate determination of the distribution with depth of damage. At the low dose rates used, reasonable agreement with a simple model for the formation of amorphous silicon as a function of ion, temperature, and dose is obtained.
The paramagnetic resonance spectrum of divalent manganese has been measured in a single crystal of CdSe (CV) at 77°K. The parameters are g=2.003±0.001, A = (-62.7±0.5)X10" 4 cm" 1 , D= (15.2±0.5) X10" 4 cm" 1 , a= (+!4.3±1.0)X10-4 cm" 1 , F= (-2.0±1.0)Xl(r 4 cm" 1 . It is to be noted that in this hexagonal crystal the effect of the cubic field parameter a is comparable to that of the axial field parameter D. The large value of a is attributed to covalency effects. A comparison of the measured a value with a values found for Mn++ in other wurtzite and zincblende crystals shows that there is a correlation between the magnitude of the a value and the amount of covalency. A similar correlation between the value of D and the amount of covalency is also found and accounts for the low value of D in CdSe.
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