Structural, Optical, and Electrical Properties of Amorphous Silicon Films

Simulation of Fiber Fuse Phenomenon in Single-Mode Optical Fibers

“…The α Si values calculated by Eq. (8) are in good agreement with the experimental values reported by Brodsky et al [77] for the case of hω > 1.5 eV.…”

“…The optical absorption spectrum of amorphous Si was reported by Brodsky et al [77]. The absorption coefficient α Si of amorphous Si in Eq.…”

“…α 0 and γ are estimated to be 9.016 × 10 3 cm −1 and 0.14, respectively, by simulation using the experimental α Si values reported by Brodsky et al [77].…”

Some aspects of pulsed laser deposition of Si nanocrystalline films

“…These values are larger than absorption edge of a-Si deposited in vacuum (E g ~1.2 eV) and of a-Si annealed at 400° C (E g ~ 1.4 eV) [16].…”

Electron spin-lattice relaxation in hydrogenated amorphous semiconductors

“…During this period of "ignorance," various workers fabricated a-Si and a-Ge by employing various atomic deposition procedures other than the glow discharge method. All of them reported the presence of large amounts of paramagnetic defect centers [17,24,25,26,27,28,29] which were identified as dangling bonds. The first attempt to introduce hydrogen deliberately was done not in a-Si but in a-Ge by A. J. Lewis [30] and his collaborators.…”