Flexible Memristive Memory Array on Plastic Substrates

Abstract

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has recently increased due to their advantages over present rigid electronic systems. Flexible memory is an essential part of electronic systems for data processing, storage, and communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. This paper describes the development of NOR type flexible resistive random access memory (RRAM) with a one transistor-one memristor structure (1T-1M). By integration of a high-performance single crystal silicon transistor with a titanium oxide based memristor, random access to memory cells on flexible substrates was achieved without any electrical interference from adjacent cells. The work presented here can provide a new approach to high-performance nonvolatile memory for flexible electronic applications.

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

“…3(i). In fact, the scenario of electric-field-driven drift of charged oxygen vacancies is often cited to explain the bipolar resistive switching observed in a wide range of transition-metal oxides [32,34,[41][42][43][44]. The formation energy of oxygen vacancies is quite low in STO, and its presence cannot be excluded even in LAO/STO samples grown at high oxygen pressures (e.g., 10 À3 mbar in our experiments) [18,45].…”

Non-volatile organic memory with sub-millimetre bending radius

“…In particular, high-performance flexible non-volatile memories based on various data storage principles such as resistive type [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] , flash 4,[25][26][27][28][29] and ferroelectric [30][31][32][33][34][35][36][37][38][39][40] hold great promise in a variety of emerging applications ranging from mobile computing to information management and communication. While the recent advances in this area are impressive, novel organic materials and electronic device structures that can be tightly rolled, crumpled, stretched, sharply folded and unfolded repeatedly without any performance degradation still need to be developed.…”

Memristor-based memory: The sneak paths problem and solutions

“…Finally, it should be mentioned that one of the major issue of using transistor gating is its limitation to the 3D stacking of memristor arrays. In [46] an array of one transistor and one memristor (1T1M) is reported. They report a gating transistor of 10µm channel length and 200µm channel width.…”