Nonvolatile Resistive Switching in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>Pt</mml:mi><mml:mo>/</mml:mo><mml:msub><mml:mi>LaAlO</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Heterostructures

Wu, Shuxiang; Luo, Xin; Turner, Stuart; Peng, Haiyang; Lin, Wencheng; Ding, Junfeng; David, Adrian; Wang, Biao; Tendeloo, Gustaaf Van; Wang, Junling; Wu, Tom

doi:10.1103/physrevx.3.041027

Cited by 83 publications

(72 citation statements)

References 83 publications

(115 reference statements)

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“…The apparent asymmetry in switching time has also been observed in Al/W:AlO x /WO y /W [14], La 2/3 Sr 1/3 MnO 3 /Pb(Zr 0.2 Ti 0.8 )O 3 /La 2/3 Sr 1/3 MnO 3 [15], and Pt/LaAlO 3 /SrTiO 3 [16] devices. Wu et al proposed an asymmetric redox reaction in W:AlO x /WO y bilayer devices and attributed the switching time difference to the different Gibbs free energy in AlO x and WO y layers [14].…”

Section: Resultsmentioning

confidence: 90%

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Jia

Yang

et al. 2018

Nanoscale Res Lett

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Asymmetric resistive switching processes were observed in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 105 ns under − 8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO3/Nb:SrTiO3 heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions.

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Section: Resultsmentioning

confidence: 90%

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Jia

Yang

et al. 2018

Nanoscale Res Lett

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“…Particularly, resistive switching devices have been demonstrated as a promising nonvolatile memory technology where the resistance states are controlled by an external electrical field. [6][7][8][9][10] For example, Choi et al studied the resistive switching effect in a Pt/STO/Si heterostructure, and attributed it to the change of electrical property at the Pt/STO interface as a result of interfacial charge transfer. 8 Furthermore, such interface-modulated resistive switching has been extensively reported for other transition-metal oxides.…”

Section: Introductionmentioning

confidence: 97%

“…[1][2][3][4][5][6][7][8][9][10][11] Although stoichiometric STO is an excellent band insulator with a wide band gap of 3.2-3.3 eV, 12 metallic conduction can be readily achieved by cation substitution or oxygen reduction (e.g. thermally or electrically).…”

Section: Introductionmentioning

confidence: 99%

Evolution of the SrTiO₃–MoO₃ Interface Electronic Structure: An in Situ Photoelectron Spectroscopy Study

Peng

Mao

et al. 2015

ACS Appl. Mater. Interfaces

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Modifying the surface energetics, particularly the work function of advanced materials, is of critical importance for a wide range of surface- and interface-based devices. In this work, using in situ photoelectron spectroscopy, we investigated the evolution of electronic structure at the SrTiO3 surface during the growth of ultra-thin MoO3 layers. Because of the large work function difference between SrTiO3 and MoO3, the energy band alignment on the SrTiO3 surface is significantly modified. The charge transfer and dipole formation at the SrTiO3-MoO3 interface leads to a large modulation of work function and to apparent doping in SrTiO3. The measured evolutions of electronic structure and upward band bending suggest that the growth of ultra-thin MoO3 layers is a powerful tool with which to modulate the surface energetics of SrTiO3, and this surface engineering approach could be generalized to other functional oxides.

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“…In order to promote high electron mobility, it is crucial to confine donor sites away from the conducting plane, without preventing the 2DES formation in the STO top layers. Previous attempts to control the defect concentration profile and thus enhance the mobility involved the use of crystalline insulating overlayers [14,15], adsorbates [16], amorphous materials [17] and even thin metallic layers [18,19]. A promising material to control defect formation is tungsten oxide WO 3 .…”

mentioning

confidence: 99%

Insulator-to-Metal Transition at Oxide Interfaces Induced by WO₃ Overlayers

Mattoni

Baek²,

Manca

et al. 2017

ACS Appl. Mater. Interfaces

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Interfaces between complex oxides constitute a unique playground for 2D electron systems (2DES), where superconductivity and magnetism can arise from combinations of bulk insulators. The 2DES at the LaAlO 3 /SrTiO 3 interface is one of the most studied in this regard, and its origin is determined by both the presence of a polar field in LaAlO 3 and the insurgence of point defects, such as oxygen vacancies and intermixed cations. These defects usually reside in the conduction channel and are responsible for a decreased electronic mobility. In this work, we use an amorphous WO 3 overlayer to control the defect formation and obtain an increased electron mobility in WO 3 /LaAlO 3 /SrTiO 3 heterostructures. The studied system shows a sharp insulator-to-metal transition as a function of both LaAlO 3 and WO 3 layer thickness. Low-temperature magnetotransport reveals a strong magnetoresistance reaching 900% at 10 T and 1.5 K, the presence of multiple conduction channels with carrier mobility up to 80 000 cm 2 V −1 s −1 and an unusually high effective mass of 5.6 me. The amorphous character of the WO 3 overlayer makes this a versatile approach for defect control at oxide interfaces, which could be applied to other heterestrostures disregarding the constraints imposed by crystal symmetry.The formation of a two-dimensional electron system (2DES) at the interface between band insulators SrTiO 3 (STO) and LaAlO 3 (LAO) is among the most intriguing effects studied in oxide electronics [1]. Gate tunable superconductivity [2,3], strong spin-orbit coupling [4,5] and magnetism [6,7] are some of the many phenomena observed. The origin of this 2DES is a long standing question in the solid state community and recent results indicate that a consistent picture should take into account both the built-in polar field and the presence of point defects [8][9][10]. Among these, oxygen vacancies and cation off-stoichiometry in STO are capable of inducing a 2DES [11,12]. However, defects residing in the conductive channel are usually responsible for a decreased electronic mobility [13]. In order to promote high electron mobility, it is crucial to confine donor sites away from the conducting plane, without preventing the 2DES formation in the STO top layers. Previous attempts to control the defect concentration profile and thus enhance the mobility involved the use of crystalline insulating overlayers [14,15] [18,19]. A promising material to control defect formation is tungsten oxide WO 3 . The several possible oxidations states of tungsten make WO 3 particularly active in undergoing redox reactions. For this reason this material is often utilized in electrochemical applications and electrochromic devices [20][21][22]. Also, both crystalline and amorphous WO 3 can host vacancies and interstitial atoms, thus allowing cation accommodation and diffusion, with a tendency to form compounds such as tungsten bronzes [23,24]. Recent progress demonstrated the high-quality growth of WO 3 thin films on perovskite materials [25][26][27].In this work we co...

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Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Cited by 83 publications

References 83 publications

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Evolution of the SrTiO₃–MoO₃ Interface Electronic Structure: An in Situ Photoelectron Spectroscopy Study

Insulator-to-Metal Transition at Oxide Interfaces Induced by WO₃ Overlayers

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Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Cited by 83 publications

References 83 publications

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Evolution of the SrTiO3–MoO3 Interface Electronic Structure: An in Situ Photoelectron Spectroscopy Study

Insulator-to-Metal Transition at Oxide Interfaces Induced by WO3 Overlayers

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Evolution of the SrTiO₃–MoO₃ Interface Electronic Structure: An in Situ Photoelectron Spectroscopy Study

Insulator-to-Metal Transition at Oxide Interfaces Induced by WO₃ Overlayers