Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Jia, Caihong; Li, Jiachen; Yang, Guang; Chen, Yonghai; Zhang, Weifeng

doi:10.1186/s11671-018-2513-6

Cited by 21 publications

(19 citation statements)

References 20 publications

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“…Thus, the FTJ is switched to a highresistance state 20,21,32 . Furthermore, a shift to the negative voltage side was observed in the R-V p loops, consistent with other reported MFS-FTJs 20,21,24 . The reason is that a negative voltage a b can reversely bias the Schottky barrier, which will share more voltage than forward biased situation under a positive voltage.…”

Section: Resultssupporting

confidence: 92%

“…Therefore, even quicker switching time is expected with increasing the amplitude of V p . It should be noted that the higher absolute value of V À c than V þ c indicates that the switching to a highresistance state is harder (or slower) than to a low-resistance state 24 .…”

Section: Resultsmentioning

confidence: 99%

“…Besides the intrinsic ferroelectricity induced resistive switching, the defectmediated processes, such as the voltage-driven charge trapping/ detrapping and oxygen vacancy migration, can also lead to a colossal TER effect in Nb:SrTiO 3 -based FTJs 23,24 . However, several reports in Nb:SrTiO 3 -based FTJs indicated that the time scale of resistive switching induced by ferroelectricity is around 10 ns 14,24,25 , while the latter mediated by defects is above 100 ns 24,25 . That is, the investigation of ultrafast resistive switchings is not only essential for the future development of memory technology, but also helpful to deeply understand the resistive switching mechanism in FTJs.…”

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confidence: 99%

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Sub-nanosecond memristor based on ferroelectric tunnel junction

et al. 2020

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Next-generation non-volatile memories with ultrafast speed, low power consumption, and high density are highly desired in the era of big data. Here, we report a high performance memristor based on a Ag/BaTiO 3 /Nb:SrTiO 3 ferroelectric tunnel junction (FTJ) with the fastest operation speed (600 ps) and the highest number of states (32 states or 5 bits) per cell among the reported FTJs. The sub-nanosecond resistive switching maintains up to 358 K, and the write current density is as low as 4 × 10 3 A cm −2. The functionality of spike-timingdependent plasticity served as a solid synaptic device is also obtained with ultrafast operation. Furthermore, it is demonstrated that a Nb:SrTiO 3 electrode with a higher carrier concentration and a metal electrode with lower work function tend to improve the operation speed. These results may throw light on the way for overcoming the storage performance gap between different levels of the memory hierarchy and developing ultrafast neuromorphic computing systems.

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Section: Resultssupporting

confidence: 92%

Section: Resultsmentioning

confidence: 99%

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confidence: 99%

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Sub-nanosecond memristor based on ferroelectric tunnel junction

et al. 2020

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“…Next, the value of the applied voltage, at which different resistance states appear, significantly exceeds the coercive field of FE thin film 6 , suggesting a rather complex way of the resistance changing in the FTJ structures. Finally, a strong impact of charged oxygen vacancies migration on the resistive switching in thin FE films was experimentally observed recently [9][10][11] . In that regard, in FE films with a thickness greater than the mean free path of the injected electrons, it is reasonably to suppose that the point defects start playing an important role.…”

mentioning

confidence: 79%

Structure-resistive property relationships in thin ferroelectric BaTiO$$_{3}$$ films

Андреева

Petraru

Vilkov

et al. 2020

Sci Rep

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A combined study of local structural, electric and ferroelectric properties of SrTiO$$_{3}$$ 3 /La$$_{0.7}$$ 0.7 Sr$$_{0.3}$$ 0.3 MnO$$_{3}$$ 3 /BaTiO$$_{3}$$ 3 heterostructures was performed by Piezoresponse Force Microscopy, tunneling Atomic Force Microscopy and Scanning Tunneling Microscopy in the temperature range 30–295 K. The direct correlation of film structure (epitaxial, nanocrystalline or polycrystalline) with local electric and ferroelectric properties was observed. For polycrystalline ferroelectric films the predominant polarization state is defined by the peculiarity of screening the built-in field by positively charged point defects. Based on Scanning Tunneling Spectroscopy results, it was found that a sequent voltage application provokes the modification of local resistive properties related to the redistribution of point defects in thin ferroelectric films. A qualitative analysis of acquired Piezoresponse Force Microscopy, tunneling Atomic Force Microscopy and Scanning Tunneling Microscopy images together with Scanning Tunneling Spectroscopy measurements enabled us to conclude that in the presence of structural defects the competing processes of electron injection, trap filling and the drift of positively charged point defects drives the change of resistive properties of thin films under applied electric field. In this paper, we propose a new approach based on Scanning Tunneling Microscopy/Spectroscopy under ultrahigh vacuum conditions to clarify the influence of point defects on local resistive properties of nanometer-thick ferroelectric films.

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“…For instance, the ON/OFF ratio in the BiFeO 3 /SrRuO 3 heterostructure is closely related to the voltage–sweep rate. [28c] In BaTiO 3 /Nb:SrTiO 3 heterostructures, the set switching time is ≈10 ns, while the reset switching time can approach 10 5 ns . The issue of resistive‐switching speed contributes to understanding the RS process in ferroelectric heterostructures.…”

Section: Summary and Prospectsmentioning

confidence: 99%

Resistive Switching Behavior in Ferroelectric Heterostructures

Wang

Bai

2019

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Resistive random‐access memory (RRAM) is a promising candidate for next‐generation nonvolatile random‐access memory protocols. The information storage in RRAM is realized by the resistive switching (RS) effect. The RS behavior of ferroelectric heterostructures is mainly controlled by polarization‐dominated and defect‐dominated mechanisms. Under certain conditions, these two mechanisms can have synergistic effects on RS behavior. Therefore, RS performance can be effectively improved by optimizing ferroelectricity, conductivity, and interfacial structures. Many methods have been studied to improve the RS performance of ferroelectric heterostructures. Typical approaches include doping elements into the ferroelectric layer, controlling the oxygen vacancy concentration and optimizing the thickness of the ferroelectric layer, and constructing an insertion layer at the interface. Here, the mechanism of RS behavior in ferroelectric heterostructures is briefly introduced, and the methods used to improve RS performance in recent years are summarized. Finally, existing problems in this field are identified, and future development trends are highlighted.

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Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Cited by 21 publications

References 20 publications

Sub-nanosecond memristor based on ferroelectric tunnel junction

Sub-nanosecond memristor based on ferroelectric tunnel junction

Structure-resistive property relationships in thin ferroelectric BaTiO$$_{3}$$ films

Resistive Switching Behavior in Ferroelectric Heterostructures

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