Flexible and twistable non-volatile memory cell array with all-organic one diode–one resistor architecture

Abstract

Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode-one resistor architectures. Our allorganic one diode-one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode-one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode-one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

Non-volatile organic memory with sub-millimetre bending radius

“…In particular, high-performance flexible non-volatile memories based on various data storage principles such as resistive type [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] , flash 4,[25][26][27][28][29] and ferroelectric [30][31][32][33][34][35][36][37][38][39][40] hold great promise in a variety of emerging applications ranging from mobile computing to information management and communication. While the recent advances in this area are impressive, novel organic materials and electronic device structures that can be tightly rolled, crumpled, stretched, sharply folded and unfolded repeatedly without any performance degradation still need to be developed.…”

An upconverted photonic nonvolatile memory

“…In this regard, we designed a photonic flash memory device where IR light is used for data encryption in addition to an applied voltage bias. In flash memory device architecture, most of the organic or inorganic semiconductors have almost no absorption in the IR region due to their typical optical energy band gap [24][25][26][27][28] . Upconversion (UC) describes a nonlinear optical process, in which a UC material generates one high-energy photon for every two or more lowenergy excitation photons.…”

High performance, foldable, organic memories based on ultra-low voltage, thin film transistors

“…Several examples have been reported in this sense. For instance Ji et al [19] reported about the fabrication of flexible arrays of resistive memory devices capable to be bent down to 3 mm without compromising their functionality. Other works [20,21] reported about flexible (high voltage) OTFT-based memory elements but in both cases the devices have been tested only with bending radii not smaller than 6 mm and 20 mm respectively.…”