Film Bulk Acoustic Resonator using High-Acoustic-Impedance Electrodes

Ueda, Masahiko; Nishihara, Tokihiro; Taniguchi, S.; Yokoyama, Tsuyoshi; Tsutsumi, J.; Iwaki, Masafumi; Satoh, Y.

doi:10.1143/jjap.46.4642

Cited by 20 publications

(14 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Many research works have studied the effects of various electrode materials, including Pt [ 67 ], Mo [ 66 , 68 ], W [ 69 ], Ru [ 70 , 71 ], Ir [ 72 , 73 , 74 ], Ta [ 75 ], Al/Au/Cu [ 76 ], CNT (carbon nanotube) [ 77 ], graphene [ 78 , 79 ], and ITO (indium tin oxide) [ 80 ]. Among them, Mo, W, Ru, and Ir have high Young’s modulus, but the density of W is relatively high.…”

Section: Methodsmentioning

confidence: 99%

“…Masanori et al further studied the effect of Young’s modulus E and density ρ on k eff 2 (

) [ 71 ]. It was found that when the ρ is fixed, k eff 2 increases with the increase of the electrode Z ( E increases) ( Figure 10 b), and when the E is fixed, the k eff 2 changes slightly as the electrode Z increases ( ρ increases) ( Figure 10 c).…”

Section: Methodsmentioning

confidence: 99%

“… ( a ) Acoustic impedance, Young’s modulus, and density of electrode materials [ 71 ]. Relationship between k eff 2 and normalized acoustic impedance with ( b ) ρ fixed and ( c ) E fixed [ 71 ]. Reproduced with permission from [ 71 ].…”

Section: Figurementioning

confidence: 99%

“…Relationship between k eff 2 and normalized acoustic impedance with ( b ) ρ fixed and ( c ) E fixed [ 71 ]. Reproduced with permission from [ 71 ].…”

Section: Figurementioning

confidence: 99%

See 3 more Smart Citations

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

et al. 2020

View full text Add to dashboard Cite

With the rapid commercialization of fifth generation (5G) technology in the world, the market demand for radio frequency (RF) filters continues to grow. Acoustic wave technology has been attracting great attention as one of the effective solutions for achieving high-performance RF filter operations while offering low cost and small device size. Compared with surface acoustic wave (SAW) resonators, bulk acoustic wave (BAW) resonators have more potential in fabricating high- quality RF filters because of their lower insertion loss and better selectivity in the middle and high frequency bands above 2.5 GHz. Here, we provide a comprehensive review about BAW resonator researches, including materials, structure designs, and characteristics. The basic principles and details of recently proposed BAW resonators are carefully investigated. The materials of poly-crystalline aluminum nitride (AlN), single crystal AlN, doped AlN, and electrode are also analyzed and compared. Common approaches to enhance the performance of BAW resonators, suppression of spurious mode, low temperature sensitivity, and tuning ability are introduced with discussions and suggestions for further improvement. Finally, by looking into the challenges of high frequency, wide bandwidth, miniaturization, and high power level, we provide clues to specific materials, structure designs, and RF integration technologies for BAW resonators.

show abstract

Section: Methodsmentioning

confidence: 99%

“…Masanori et al further studied the effect of Young’s modulus E and density ρ on k eff 2 (

Section: Methodsmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

“…Relationship between k eff 2 and normalized acoustic impedance with ( b ) ρ fixed and ( c ) E fixed [ 71 ]. Reproduced with permission from [ 71 ].…”

Section: Figurementioning

confidence: 99%

See 2 more Smart Citations

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

et al. 2020

View full text Add to dashboard Cite

show abstract

“…The materials considered in this calculation are Mo, Ru, Rh, W and TiN. Mo and Ru are widely used as an electrode for FEARs [6][7][8][9]. The material parameters are shown in Table 1.…”

Section: Materials Of Electrodesmentioning

confidence: 99%

Application of Film Bulk Acoustic Wave Resonator for Sensitive Mass Sensor

Tanaka¹,

Fujita²,

Kurisu³

et al. 2008

Trans. Mat. Res. Soc. Japan

View full text Add to dashboard Cite

Film Bulk Acoustic wave Resonator (FBAR) is one of the band pass filters employed for high frequency devices. In order to apply FBARs to sensitive mass sensor, quality factor defined by the ratio of the resonance frequency to the full width at half maximum for the frequency characteristics is required to be large. In this study, operating characteristic for the FBAR was analyzed using the commercialized software Ansys (Ansys Inc.) which solves electric field-structure coupled problems using a 3 dimensional finite element method. A change in resonance frequency for the FBAR due to additional weight was confirmed by the simulation, and the FBAR was estimated to show the 10 Hz of the change in the resonance frequency for 2 GHz band operation when 2 pg of additional weight was loaded. Thereby the FBAR was considered to work as a sensitive mass sensor. The electrode materials were found to affect quality factor, and the highest quality factor was also found to be obtained when the electrode is TiN compared with Mo, Ru, Rh and W.

show abstract

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Zha,

Luo,

Tao

et al. 2024

AAPPS Bull.

View full text Add to dashboard Cite

Bandpass filters with high frequency and wide bandwidth are indispensable parts of the fifth-generation telecommunication technologies, and currently, they are mainly based on surface and bulk acoustic wave resonators. Owing to its high mechanical strength, excellent stability at elevated temperatures, good thermal conductivity, and compatibility with complementary metal-oxide-semiconductor technology, aluminum nitride (AlN) becomes the primary piezoelectric material for high-frequency resonators. This review briefly introduces the structures and key performance parameters of the acoustic resonators. The common filter topologies are also discussed. In particular, research progresses in the piezoelectric AlN layer, electrodes, and substrates of the resonators are elaborated. Increasing the electromechanical coupling constant is the main concern for the AlN film. To synthesize AlN in single-crystalline or poly-crystalline with a high intensity of (0002) orientation, and alloy the AlN with other elements are two effective approaches. For the substrates and bottom electrodes, lattice and thermal expansion mismatch, and surface roughness are critical for the synthesis of a high-crystal-quality piezoelectric layer. The electrodes with low electrical resistance, large acoustic-impedance mismatch to the piezoelectric layer, and low density are ideal to reduce insertion loss. Based on the research progress, several possible research directions in the AlN-based filters are suggested at the end of the paper.

show abstract

Film Bulk Acoustic Resonator using High-Acoustic-Impedance Electrodes

Cited by 20 publications

References 17 publications

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

Application of Film Bulk Acoustic Wave Resonator for Sensitive Mass Sensor

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Contact Info

Product

Resources

About