The bulk acoustic wave filter composed of piezoelectric thin film resonators has many features superior to those of other small filters such as a surface acoustic wave (SAW) filter and a ceramic filter. As it has no fine structure in its electrode design, it has a high Q factor that leads to low-loss and sharp-cut off characteristics and a high power durability particularly in the highfrequency range. Furthermore, it has the potentiality of integrated devices on a Si substrate. In this paper, we review the recent developments of piezoelectric thin film resonator filters in the world, including our development for mobile communication applications. After describing the feature and history of the piezoelectric thin film resonator filters, our technologies are introduced in focusing on the resonator structures, the piezoelectric thin film and electrode film materials, the cavity structures, the filter structure and its design rules and characteristics, comparing with SAW filters. The competition and coexistence between the piezoelectric thin film resonator filters and the SAW filters are also described. In this paper, we describe the development of a piezoelectric thin film resonator from the standpoint of researchers who have a long experience of SAW filter development.

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We propose a series of new compositions of AlN-based piezoelectric material based on the results of first-principles calculation. The composition is expressed by ð y ; 1Ày Þ x Al 1%x N, where the elements α and β are selected to maintain the charge neutrality of the host AlN. We found that the selection of Mg 2+ for α and Hf 4+ and Zr 4+ for β with y = 0.5 show good chemical stability with much better piezoelectric properties than pure AlN. Our results indicate broad compositional freedom for improving the piezoelectric properties of AlN by using the co-doping technique.

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We have developed an X-band filter utilizing air-gap-type film bulk acoustic resonators (FBARs). The air-gap structure is simple and cost-effective. Results from both simulations and experiments demonstrate that a dome-shaped air gap was formed between the substrate surface and the bottom electrode and that an air-gap-type FBAR structure was possible. The air gap can be formed on the flat substrate using stress control of piezoelectric and metal films without using a thick sacrificial layer. As a result, the fabricated X-band FBAR operated successfully with a keff2 of 6.30%, a resonance Q of 246, and an antiresonance Q of 462. The fabricated filter had a center frequency of 9.07 GHz, a fractional bandwidth of 3.1% and a minimum insertion loss of 1.7 dB.

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