Field effect transistor based on single crystalline InSb nanowire

High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

“…The capacitance of the nanowire can be regarded as $\mathrm{C}=2{\mathrm{normal\pi ϵ}}_0{\mathrm{normalϵ}}_{{\mathrm{SiO}}_2}\mathrm{L}/\ln \left(4\mathrm{h}/\mathrm{d}\right)$, where ${\mathrm{ϵ}}_{{\mathrm{normalSiO}}_2}$ is the dielectric constant of SiO 2 (approximately 3.9), ϵ 0 is the vacuum permittivity, h is the thickness of SiO 2 (120 nm), and d is the average radius of the InSb nanowires. These equations show that the calculation of the μ is 215.25 cm 2 V −1 s −1 at V ds = 5 V. The value is about two times higher than the reported value of PLD fabricated InSb nanowires [17]. However, the value is much smaller than those of the bulk and other reported InSb nanowires [29,30].…”

“…Therefore, InSb is a highly promising material for device applications involving high-speed-response electronic nanodevices, optical communication devices, and optical detectors [13,14]. Owing to the aforementioned unique characteristics, now, many groups use different synthesis methods to produce InSb nanowires, i.e., chemical beam epitaxy [15], chemical vapor deposition [16], and pulsed laser deposition (PLD) [17]. Meanwhile, the electrical transport characteristics are also widely investigated [18,19].…”

Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy

“…On the other hand, for binary InSb nanowires within a diameter range of 50-100 nm, very low mobility values were observed, consistent with recent reports. [17][18][19] However, we find the mobility to be strongly diameter dependent, such that nanowires in the low diameter range had very high resistivity and low extracted mobility, whereas thicker wires show improved values.…”

“…Wang et al studied thin (30-50 nm diameter) h110i-oriented InSb nanowires grown by pulsed laser CVD and extracted very low mobility values in the range 100-130 cm 2 /Vs. 17 Transport in thick (100 nm), tapered InSb nanowires grown by electro deposition was investigated by Das et al, who found field-effect mobility values around 1200 cm 2 /Vs. 18 Our findings also agree with observations based on InAs nanowires, where a similar mobility degradation of unpassivated nanowires is observed for thin wires.…”

First-principles study of size-, surface- and mechanical strain-dependent electronic properties of wurtzite and zinc-blende InSb nanowires

“…Xie), fning@gxtc.edu.cn (F. Ning). chemical vapor deposition (CVD) [15], and pulsed laser deposition (PLD) [16]. These methods are also widely used in synthesis of other III-V NWs, such as InAs and GaP.…”