Through first-principles
computations on the structural, electronic,
and optical properties of perfect and defective two-dimensional C2N crystals, the effects of point defects on photoelectronic
characteristics of this potential photocatalysts were investigated.
The introduction of point defects, including N vacancies, interstitial
C impurities, O@C and H@N dopants, and the interstitial O in the benzene
ring and big ring, should result in more appropriate band structures
and broadened optical absorptions and generally promoted carrier mobilities
of C2N photocatalysts. Remarkably, the defective C2N with N vacancy, interstitial O in benzene/big ring, and
interstitial C in benzene ring are highly recommended for the photocatalytic
applications due to their broadened optical absorption, spatially
separated e––h+ pairs, excellent
redox capacities, and fast carrier migrations. Our theoretical results
can provide some guidance for further exploring the utilization of
2D C2N material and some possible strategies for improving
its photoactivities.