Very recently, the 2D form of MoSi2N4 has been successfully fabricated (Hong et al 2020 Science
369 670). Motivated by these recent experimental results, we investigate the structural, mechanical, thermal, electronic and optical properties of the MoSi2N4 monolayer. The mechanical study confirms the stability of the MoSi2N4 monolayer. The Young’s modulus decreases by ∼30%, while the Poisson’s ratio increases by ∼30% compared to the corresponding values of graphene. In addition, the MoSi2N4 monolayer’s work function is very similar to that of phosphorene and MoS2 monolayers. The electronic structure shows that the MoSi2N4 monolayer is an indirect semiconductor with a band gaps of 1.79 (2.35) eV using the GGA (HSE06) functional. The thermoelectric performance of the MoSi2N4 monolayer has been revealed and a figure of merit slightly larger than unity at high temperatures is calculated. The optical analysis shows that the first absorption peak for in-plane polarization is located in the visible range of the spectrum, therefore, the MoSi2N4 monolayer is a promising candidate for advanced optoelectronic nanodevices. In summary, the fascinating MoSi2N4 monoloayer is a promising 2D material for many applications due to its unique physical properties.
In a very recent accomplishment, the two-dimensional form of biphenylene network (BPN) has been fabricated. Motivated by this exciting experimental result on 2D layered BPN structure, herein we perform detailed density-functional theory-based first-principles calculations, in order to gain insight into the structural, mechanical, electronic and optical properties of this promising nanomaterial. Our theoretical results reveal the BPN structure is constructed from three rings of tetragon, hexagon and octagon, meanwhile the electron localization function shows very strong bonds between the C atoms in the structure. The dynamical stability of BPN is verified via the phonon band dispersion calculations. The mechanical properties reveal the brittle behavior of BPN monolayer. The Young’s modulus has been computed as 0.1 TPa, which is smaller than the corresponding value of graphene, while the Poisson’s ratio determined to be 0.26 is larger than that of graphene. The band structure is evaluated to show the electronic features of the material; determining the BPN monolayer as metallic with a band gap of zero. The optical properties (real and imaginary parts of the dielectric function, and the absorption spectrum) uncover BPN as an insulator along the zz direction, while owning metallic properties in xx and yy directions. We anticipate that our discoveries will pave the way to the successful implementation of this 2D allotrope of carbon in advanced nanoelectronics.
Two-dimensional polyaniline (2D PANI) with structural unit C 3 N is an indirect semiconductor with 0.4 eV band gap, which has attracted a lot of interest because of its unusual electronic, optoelectronic, thermal and mechanical properties useful for various applications. Adsorption of adatoms is an effective method to improve and tune the properties of C 3 N. Using first-principles calculations we investigated the adsorption of adatoms including
Low-symmetry Penta-PdPSe with intrinsic in-plane anisotropy synthesized successfully [P. Li et al., \textit{Adv. Mater.}, 2102541 (2021)]. Motivated by this experimental discovery, we investigate the structural, mechanical, electronic, optical and thermoelectric...
By employing first-principles calculations within the framework of density functional theory, we investigated the structural, electronic, and magnetic properties of graphene and various two-dimensional carbon-nitride (2DNC) nanosheets. The different 2DCN gives rise to diverse electronic properties such as metals (C 3 N 2 ), semimetals (C 4 N and C 9 N 4 ), half-metals (C 4 N 3 ), ferromagnetic-metals (C 9 N 7 ), semiconductors (C 2 N, C 3 N, C 3 N 4 , C 6 N 6 , and C 6 N 8 ), spin-glass semiconductors (C 10 N 9 and C 14 N 12 ), and insulators (C 2 N 2 ). Furthermore, the effects of adsorption and substitution of hydrogen atoms as well as N-vacancy defects on the electronic and magnetic properties are systematically studied. The introduction of point defects, including N vacancies, interstitial H impurity into graphene and different 2DCN crystals, results in very different band structures. Defect engineering leads to the discovery of potentially exotic properties that make 2DCN interesting for future investigations and emerging technological applications with precisely tailored properties. These properties can be useful for applications in various fields such as catalysis, energy storage, nanoelectronic devices, spintronics, optoelectronics, and nanosensors.
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