Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films

Lee, J. M.; Lee, K. I.; Chang, Joonyeon; Ham, Moon Ho; Huh, Kwang Soo; Myoung, Jae Min; Hwang, Woong Joon; Shin, Moo Whan; Han, Sung Hee; Kim, H. J.; Lee, W. Y.

doi:10.1016/s0167-9317(03)00311-3

Cited by 14 publications

(4 citation statements)

References 16 publications

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“…The GaN- and ZnO-based DMS materials were predicted to be ferromagnetic with high T C above room temperature, so they have been extensively studied for many important applications that require the ferromagnetism at room temperature. − However, many reported experimental values are quite different and even contradictory. Near or above room-temperature ferromagnetism was found by a number of research groups, − while no ferromagnetism or a very low T C was also reported. − Another important III−V DMS, (Ga,Mn)P, had been predicted to have T C ≈ 100 K . However, it was reported that the ferromagnetic behaviors can persist at near room temperature for 3 at.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Magnetic Properties of Manganese-Doped GaP Nanowires

Han¹,

Bae²,

Seo³

et al. 2005

J. Phys. Chem. B

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We characterized the structure and magnetic properties of Mn-incorporated GaP nanowires synthesized by thermal evaporation of GaP/Mn powders. The nanowires consist of twin-crystalline zinc blende GaP grown with the [111] direction and doped with about 1 at. % Mn. They are often sheathed with the bumpy amorphous outerlayers containing high concentrations of Mn and O. The ferromagnetic hysteresis curves at 5 and 300 K and temperature-dependent magnetization provide evidence for the ferromagnetism with the Curie temperature higher than room temperature. Magnetic properties of individual nanowires have been measured, showing a large negative magnetoresistance equal to about -5% at 5 K. We suggest that the Mn doping of GaP nanowires would form a dilute magnetic semiconductor.

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Section: Introductionmentioning

confidence: 99%

Synthesis and Magnetic Properties of Manganese-Doped GaP Nanowires

Han¹,

Bae²,

Seo³

et al. 2005

J. Phys. Chem. B

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“…The material that has attracted the most attention is Mn-doped GaN because it was predicted to be FM at room temperature. , However, the initial promise of this material has not been realized because the magnetic properties of Mn-doped GaN are found to depend strongly on the sample preparation conditions. Various experimental groups have reported rather conflicting results ranging from FM − to antiferromagnetic (AFM) and spin glass behavior − of the material. In addition, the reported Curie temperature of materials varies over a wide range (10−945 K). − These results are believed to be due to structural defects such as clustering that may exist in thin film materials. ,, …”

mentioning

confidence: 99%

“…Various experimental groups have reported rather conflicting results ranging from FM − to antiferromagnetic (AFM) and spin glass behavior − of the material. In addition, the reported Curie temperature of materials varies over a wide range (10−945 K). − These results are believed to be due to structural defects such as clustering that may exist in thin film materials. ,, …”

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confidence: 99%

Ferromagnetic GaN−Cr Nanowires

et al. 2005

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Using first-principles theory, we predict ferromagnetism in Cr-doped GaN nanowires irrespective of the sites that the Cr atoms occupy. This is in contrast to Mn-doped GaN nanowires in which the magnetic coupling between the Mn atoms is sensitive to the Mn--Mn and Mn--N distances, although the ground state of Mn-doped GaN nanowires is ferromagnetic. Each Cr atom carries a magnetic moment of about 2.5 micro(B). The magnetic moment at the N site, however, is small and is aligned antiferromagnetically to the moments at the Cr atom. The magnetization axis is perpendicular to the axis of the wire, but the anisotropy energy is rather small. The easy solubility of Cr in GaN and the lack of sensitivity of ferromagnetic coupling to Cr distribution suggest that Cr-doped GaN nanowires may be a more suitable system for applications in spintronics than Mn-doped GaN nanowires.

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“…Previous research groups reported different origins for ferromagnetism in GaMnN. Ham and Myoung [15] and Lee et al [16] reported that hole or electron carriers played a key role for the ferromagnetism in GaMnN, while Nakayama et al [17] and Baik et al [18] insisted that ferromagnetic secondary phases such as Mn x N y or Mn x Ga y mainly contribute the observed ferromagnetism in GaMnN. Therefore, the HRXRD, HFXRD, XPS, PL and Hall measurements were performed to clarify the origin of the observed ferromagnetism for the present GaMnN film grown by MOCVD.…”

Section: Article In Pressmentioning

confidence: 96%