Ferromagnetic GaN−Cr Nanowires

Wang, Qian; Sun, Qiang; Jena, P.; Kawazoe, Yoshiyuki

doi:10.1021/nl051133r

Cited by 50 publications

(45 citation statements)

References 31 publications

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“…24 Experimental and theoretical studies so far have shown that those SiNWs exhibit a wide range of physical and chemical properties, which may be of interest in technological applications. 25,26 Depending on whether the dangling bonds on their outer surface are saturated with hydrogen atoms and the shape of their cross section, they exhibit semiconducting or metallic behavior. Usually, unsaturated dangling bonds on the outer surface attribute a metallic character to a SiNW.…”

Section: ͓110͔mentioning

confidence: 99%

Functionalization of silicon nanowires with transition metal atoms

2008

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This paper investigates atomic structure, mechanical, electronic, and magnetic properties of silicon nanowires ͑SiNW͒ using first-principles plane-wave calculations within density-functional theory. We considered bare, hydrogen-terminated, and 3d-transition metal ͑TM͒ adsorbed SiNWs oriented along ͓001͔ direction. We also studied Cr interstitial impurity. Nanowires of different sizes are initially cut from the bulk Si crystal in rodlike forms, and subsequently their atomic structures are relaxed before and also after the termination of surface dangling bonds by hydrogen atoms. We first presented an extensive analysis of the atomic structure, stability, elastic, and electronic properties of bare and hydrogen-terminated SiNWs. The energetics of adsorption and resulting electronic and magnetic properties are examined for different levels of 3d-TM atom coverage. Adsorption of TM atoms generally results in magnetic ground state. The net magnetic moment increases with increasing coverage. While specific SiNWs acquire half-metallic behavior at low coverage, at high coverage ferromagnetic nanowires become metallic for both spin directions, and some of them have very high spin polarization at the Fermi level. Our results suggest that the electronic and spintronic devices with conducting interconnects between them can be fabricated on a single SiNW at a desired order. We believe that our study will initiate new research on spintronic applications of SiNWs.

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Section: ͓110͔mentioning

confidence: 99%

Functionalization of silicon nanowires with transition metal atoms

2008

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“…[17][18][19] There have been several recent theoretical investigations of the electronic structure of GaN nanowires, and in all cases, a periodic slab model was used to calculate the nanowires. Wang et al 22,23 have calculated the electronic structure of an unsaturated nanowire in the [0001] growth direction with a 10 Å diameter, and examined the magnetic properties after pair-doping with manganese or chromium atoms. They found both dopants produce ferromagnetic coupling, with preferential substitution of these atoms at the edge of the nanowire.…”

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confidence: 99%

Geometry and diameter dependence of the electronic and physical properties of GaN nanowires from first principles

et al. 2008

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We present a comprehensive first-principles investigation of the atomic and electronic structures of gallium nitride nanowires, and examine the dependence on nanowire diameter and shape. We consider nanowires in the [0001] growth direction, with diameters ranging from 8 to 35 Å, and investigate the influence of saturating the dangling bonds at the edges of nanowires. We find that unsaturated nanowires are semi-conducting and contain dangling bond states in the region of the band gap, the positions of which remain rather constant with varying diameter. Saturating the nanowires with hydrogen removes these states, and the band gap decreases with increasing nanowire diameter. For the unsaturated wires there is a considerable contraction of the Ga-N bondlengths at the edge of the wires of 6.0-7.4%, while for saturated wires it is <1.5%. We also calculate the heat of formation of the nanowires and find that as the diameter of the nanowire increases, the average relative stability of the nanowire increases, as intuitively expected.

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“…In addition, the magnitude of the magnetic moments can be tuned by changing the wire thickness. They also carried out a theoretical study of the magnetic properties of Cr-doped GaN nanowires [23]. In contrast to the Mn-doped GaN nanowires, the GaN/Cr nanowire is found to be FM irrespective of the distribution of the Cr atoms.…”

Section: Tm-doped Nanowiresmentioning

confidence: 99%

Low Dimensional Nanomaterials for Spintronics

Yang

Xiang

2008

One-Dimensional Nanostructures

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Moore's Law in microelectronic technology will break down as the size of individual bits approaches the dimension of atoms; this has been called the end of the silicon road map. For this reason and also for enhancing the multifunctionality of devices, the spin degree of freedom of electron is being investigated for magnetoelectronics applications, i.e., spintronics. Spin-based devices are closely connected with the development of nanotechnology. In this chapter, recent developments of the low-dimensional nanomaterials for spintronics are reviewed. In the first section, the main concepts of spintronics including nanospintronics are briefly discussed. Experimental studies on transition-metal-doped nanowires and nanotubes are summarized in the second section. Extensive theoretical works in this field are reviewed in the third section. Finally, an outlook is given in the last section. SpintronicsSpintronics (a neologism for "spin-based electronics") [1,2], also known as magnetoelectronics, is an emergent technology that exploits the quantum propensity of electrons to spin as well as make use of their charge state. The spin itself is manifested as a detectable weak magnetic energy state characterized as "spin up" and "spin down". Spintronics started attracting massive interest with the discovery of giant magnetoresistance (GMR) in the 1980s, which has already been adopted as the norm in the hard disk drive (HDD) manufacturing industry. Indeed, the impact of spintronics in the HDD industry is a mere indication of things to come.Spintronics has a number of potentially groundbreaking applications that are set to drive next-generation electronics. Although GMR can arguably be considered the driving force for spintronics at present, the biggest potential of spin-based devices is in embedded memories. Magnetoresistive random access memory (MRAM) is expected to revolutionize the memory market and contribute to the development of advanced and versatile computing and personal devices. Advances in instantly 247

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Ferromagnetic GaN−Cr Nanowires

Cited by 50 publications

References 31 publications

Functionalization of silicon nanowires with transition metal atoms

Functionalization of silicon nanowires with transition metal atoms

Geometry and diameter dependence of the electronic and physical properties of GaN nanowires from first principles

Low Dimensional Nanomaterials for Spintronics

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