We studied the adsorption of single atoms on a semiconducting and metallic single-wall carbon nanotube from first principles for a large number of foreign atoms. The stable adsorption sites, binding energy, and the resulting electronic properties are analyzed. The character of the bonding and associated physical properties exhibit dramatic variations depending on the type of the adsorbed atom. While the atoms of good conducting metals, such as Cu and Au, form very weak bonding, atoms such as Ti, Sc, Nb, and Ta are adsorbed with relatively high binding energy. Most of the adsorbed transition-metal atoms excluding Ni, Pd, and Pt have a magnetic ground state with a significant magnetic moment. Our results suggest that carbon nanotubes can be functionalized in different ways by their coverage with different atoms, showing interesting applications such as one-dimensional nanomagnets or nanoconductors and conducting connects, etc. DOI: 10.1103/PhysRevB.67.201401 PACS number͑s͒: 73.22.Ϫf, 68.43.Bc, 73.20.Hb, 68.43.Fg Single-wall carbon nanotubes ͑SWNT's͒ can serve as templates to produce reproducible, very thin metallic wires with controllable sizes.1 These metallic nanowires can be used as conducting connects and hence are important in nanodevices based on molecular electronics. Recently, Zhang et al.2 have shown that a continuous Ti coating of varying thickness and a quasicontinuous coating of Ni and Pd can be obtained by using electron-beam evaporation techniques. Metal atoms such as Au, Al, Fe, Pb were able to form only isolated discrete particles or clusters instead of a continuous coating of SWNT's. Low-resistance contacts to metallic and semiconducting SWNT's were achieved by Ti and Ni ohmic contacts.3 Most recently, ab initio density-functional calculations 4 have indicated that stable rings and tubes of Al atoms can form around a semiconducting SWNT. It is argued that either persistent currents through these conducting nanorings, or conversely very high magnetic fields can be induced at their center. 4 It is expected that novel molecular nanomagnets and electromagnetic devices can be generated from these metallic nanostructures formed by adatom adsorption on SWNT's. As an example, one can contemplate to generate a nanodevice by the modulating adsorption of adatoms on a bare ͑8,0͒ SWNT, which is a semiconductor 5 with an energy gap of ϳ0.64 eV. This band gap can increase to 2 eV by the adsorption of a hydrogen atom.6 Then, a quantum well ͑or dot͒ can form between two barriers at the hydrogen covered sections of the ͑8,0͒ tube. This structure is connected to the metallic reservoirs through metal coated ends of SWNT's. This way a resonant tunneling device with metal reservoirs and connects at both ends can be fabricated on a single SWNT.Clearly, the study of adsorption of atoms on nanotube surfaces is essential to achieve low-resistance ohmic contacts to nanotubes, to produce nanowires with controllable size, and to fabricate functional nanodevices. In particular, it is important to know the following: ͑i͒ Ho...

In this paper, we theoretically studied the electronic and magnetic properties of graphene and graphene nanoribbons functionalized by 3d transition-metal ͑TM͒ atoms. The binding energies and electronic and magnetic properties were investigated for the cases where TM atoms adsorbed to a single side and double sides of graphene. We found that 3d TM atoms can be adsorbed on graphene with binding energies ranging between 0.10 and 1.95 eV depending on their species and coverage density. Upon TM atom adsorption, graphene becomes a magnetic metal. TM atoms can also be adsorbed on graphene nanoribbons with armchair edge shapes ͑AGNR's͒. Binding of TM atoms to the edge hexagons of AGNR yields the minimum energy state for all TM atom species examined in this work and in all ribbon widths under consideration. Depending on the ribbon width and adsorbed TM atom species, AGNR, which is a nonmagnetic semiconductor, can either be a metal or a semiconductor with ferromagnetic or antiferromagnetic spin alignment. Interestingly, Fe or Ti adsorption makes certain AGNR's half-metallic with a 100% spin polarization at the Fermi level. Present results indicate that the properties of graphene and graphene nanoribbons can be strongly modified through the adsorption of 3d TM atoms.

From first-principles calculations, we predict that a single ethylene molecule can form a stable complex with two transition metals (TM) such as Ti. The resulting TM-ethylene complex then absorbs up to ten hydrogen molecules, reaching to gravimetric storage capacity of ∼14 wt%. Dimerization, polymerizations and incorporation of the TM-ethylene complexes in nanoporous carbon materials have been also discussed. Our results are quite remarkable and open a new approach to high-capacity hydrogen storage materials discovery.

In a recent letter ͓T. Yildirim and S. Ciraci, Phys. Rev. Lett. 94, 175501 ͑2005͔͒, the unusual hydrogen storage capacity of Ti decorated carbon nanotubes has been revealed. The present paper extends this study further to investigate the hydrogen uptake by light transition-metal atoms decorating various carbon-based nanostructures in different types of geometry and dimensionality, such as carbon linear chain, graphene, and nanotubes. Using first-principles plane-wave method we show that not only outer but also inner surface of a large carbon nanotube can be utilized to bind more transition-metal atoms and hence to increase the storage capacity. We also found that scandium and vanadium atoms adsorbed on a carbon nanotube can bind up to five hydrogen molecules. Similarly, light transition-metal atoms can be adsorbed on both sides of graphene and each adsorbate can hold up to four hydrogen molecules yielding again a high-storage capacity. Interestingly, our results suggest that graphene can be considered as a potential high-capacity H 2 storage medium. We also performed transition state analysis on the possible dimerization of Ti atoms adsorbed on the graphene and single-wall carbon nanotube.

Unusual physical properties of single-wall carbon nanotubes have started a search for similar tubular structures of other elements. In this paper, we present a theoretical analysis of single-wall nanotubes of silicon and group III-V compounds. Starting from precursor graphene-like structures we investigated the stability, energetics and electronic structure of zigzag and armchair tubes using first-principles pseudopotential plane wave method and finite temperature ab-initio molecular dynamics calculations. We showed that (n,0) zigzag and (n,n) armchair nanotubes of silicon having n ≥ 6 are stable but those with n < 6 can be stabilized by internal or external adsorption of transition metal elements. Some of these tubes have magnetic ground state leading to spintronic properties. We also examined the stability of nanotubes under radial and axial deformation. Owing to the weakness of radial restoring force, stable Si nanotubes are radially soft. Undeformed zigzag nanotubes are found to be metallic for 6 ≤ n ≤ 11 due to curvature effect; but a gap starts to open for n ≥ 12. Furthermore, we identified stable tubular structures formed by stacking of Si polygons. We found AlP, GaAs, and GaN (8,0) single-wall nanotubes stable and semiconducting. Our results are compared with those of single-wall carbon nanotubes.

We investigate the structural, mechanical, and electronic properties of the two-dimensional hexagonal structure of group III-VI binary monolayers, MX (M = B, Al, Ga, In and X = O, S, Se, Te) using first-principles calculations based on the density functional theory. The structural optimization calculations and phonon spectrum analysis indicate that all of the 16 possible binary compounds are thermally stable. In-plane stiffness values cover a range depending on the element types and can be as high as that of graphene, while the calculated bending rigidity is found to be an order of magnitude higher than that of graphene. The obtained electronic band structures show that MX monolayers are indirect band-gap semiconductors. The calculated band gaps span a wide optical spectrum from deep ultraviolet to near infrared. The electronic structure of oxides (MO) is different from the rest because of the high electronegativity of oxygen atoms. The dispersions of the electronic band edges and the nature of bonding between atoms can also be correlated with electronegativities of constituent elements. The unique characteristics of group III-VI binary monolayers can be suitable for high-performance device applications in nanoelectronics and optics.

First principles calculations are employed to provide a fundamental understanding of the relationship between the reactivity of synthetic calcium silicate phases and their electronic structure. Our aim is to shed light on the wide range of hydration kinetics observed in different phases of calcium silicate. For example, while the dicalcium silicate (Ca2SiO4) phase slowly reacts with water, the tricalcium silicate (Ca3SiO5) shows much faster hydration kinetics. We show that the high reactivity of Ca3SiO5 is mainly related to the reactive sites around its more ionic oxygen atoms. Ca2SiO4 does not contain these types of oxygen atoms, although experiments suggest that impurities may play a role in changing the reactivity of these materials. We analyze the electronic structure of a wide range of possible substitutions in both Ca3SiO5 and Ca2SiO4 and show that while the influence of different types of impurities on structural properties is similar, their effect on reactivity is very different. Our calculations suggest that the variation of electronic structure is mainly related to the formation of new hybridized orbitals and the charge exchange between the impurity atoms and the bulk material. The charge localization upon introducing impurities is quantified to predict candidate substitutions that could increase the reactivity of Ca2SiO4, which would broaden the applicability of this lower temperature and thus less costly and energetically less demanding phase.

Three-dimensional (3D) GaN is a III-V compound semiconductor with potential optoelectronic applications. In this paper, starting from 3D GaN in wurtzite and zinc-blende structures, we investigated the mechanical, electronic, and optical properties of the 2D single-layer honeycomb structure of GaN (g-GaN) and its bilayer, trilayer, and multilayer van der Waals solids using density-functional theory. Based on high-temperature ab initio molecular-dynamics calculations, we first showed that g-GaN can remain stable at high temperature. Then we performed a comparative study to reveal how the physical properties vary with dimensionality. While 3D GaN is a direct-band-gap semiconductor, g-GaN in two dimensions has a relatively wider indirect band gap. Moreover, 2D g-GaN displays a higher Poisson ratio and slightly less charge transfer from cation to anion. In two dimensions, the optical-absorption spectra of 3D crystalline phases are modified dramatically, and their absorption onset energy is blueshifted. We also showed that the physical properties predicted for freestanding g-GaN are preserved when g-GaN is grown on metallic as well as semiconducting substrates. In particular, 3D layered blue phosphorus, being nearly lattice-matched to g-GaN, is found to be an excellent substrate for growing g-GaN. Bilayer, trilayer, and van der Waals crystals can be constructed by a special stacking sequence of g-GaN, and they can display electronic and optical properties that can be controlled by the number of g-GaN layers. In particular, their fundamental band gap decreases and changes from indirect to direct with an increasing number of g-GaN layers.