2008
DOI: 10.1103/physrevb.78.195116
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Functionalization of silicon nanowires with transition metal atoms

Abstract: This paper investigates atomic structure, mechanical, electronic, and magnetic properties of silicon nanowires ͑SiNW͒ using first-principles plane-wave calculations within density-functional theory. We considered bare, hydrogen-terminated, and 3d-transition metal ͑TM͒ adsorbed SiNWs oriented along ͓001͔ direction. We also studied Cr interstitial impurity. Nanowires of different sizes are initially cut from the bulk Si crystal in rodlike forms, and subsequently their atomic structures are relaxed before and als… Show more

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Cited by 32 publications
(33 citation statements)
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“…The enhancing of bandgap or transition in the nature of configurations during passivation is due to the elimination of dangling bonds at the surface of the NW configuration, which results in removal of localized energy states close to or at the Fermi level in the unpassivated counterpart. Similar behavior was also reported for GaN NWs , GaAs NWs , and Si NWs .…”
Section: Resultssupporting
confidence: 84%
“…The enhancing of bandgap or transition in the nature of configurations during passivation is due to the elimination of dangling bonds at the surface of the NW configuration, which results in removal of localized energy states close to or at the Fermi level in the unpassivated counterpart. Similar behavior was also reported for GaN NWs , GaAs NWs , and Si NWs .…”
Section: Resultssupporting
confidence: 84%
“…19 Reaction of the latter product with benzenediazonium chloride 4 afforded the phenylhydrazone derivative 5. The structure of compound 5 was confirmed on the basis of analytical and spectral data.…”
Section: Results and Discusionmentioning
confidence: 99%
“…Although the experimental situation is far from clarified at this time, there are a number of interesting calculations predicting magnetic behavior of silicon nanowires either doped with transition metals or adsorbed on to their surfaces [50][51][52][53]. There is also computational work exploring the possibility of magnetism in silicon nanotubes or fullerene structures where transition or rare earth metal atoms are encapsulated [54,55].…”
Section: Attempts To Make Silicon-based Magnetic Semiconductors Transmentioning
confidence: 98%