Characterizations of n-type ferromagnetic GaMnN thin film grown on GaN/Al2O3 (0001) by metal-organic chemical vapor deposition

Choi, Chul Hwan; Kim, Seon Hyo; Jung, Myung Hun

doi:10.1016/j.jmmm.2009.05.017

Cited by 10 publications

(4 citation statements)

References 27 publications

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“…We found that the energy position of the Mn 2p 3/2 peak is between 641.3 and 641.6 eV. Considering the binding energy peaks for Mn 2p 3/2 at 641.0 and 642.3 eV stems from either bivalent or trivalent Mn ions [19], we believe Mn 2+ and Mn 3+ coexist in our fabricated GaMnN films. Furthermore, the binding energy for Mn 2p 3/2 peaks for the GaMnN films is found shift from 641.4 to 641.6 eV with the nitrogen pressure from 0.15 to 0.77 Pa and then shift from 641.6 to 641.3 eV with the nitrogen pressure from 0.77 to 7.0 Pa, which reveals the change of Mn valence state.…”

Section: Resultsmentioning

confidence: 68%

“…The splitting of spin-orbit (12.1 eV) is larger compared with that of Mn (11.1) [18], revealing the large spin-orbit coefficient and large p-d exchange coefficient, which is necessary for the ferromagnetic exchange-coupling. Moreover, the binding energy for observed Mn 2p 3/2 is different compared with that of Mn atoms (640.9eV) [19]. Therefore, the formation of metallic Mn clusters was ruled out.…”

Section: Resultsmentioning

confidence: 98%

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Intrinsic Ferromagnetism of the GaMnN Thin Films

Gao

Liu

et al. 2012

AMR

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The Mn-doped GaN (GaMnN) films on c-plane sapphire substrates were prepared by using Laser Molecular Beam Epitaxy (LMBE) at different base nitrogen pressure, followed by annealing in the ammonia atmosphere at 950 °C for 30 min, to study the original reason of the room-temperature ferromagnetism of GaMnN films. We found the crystalline quality was sensitive to the base nitrogen pressure during growth. X-ray photoelectron spectra (XPS) analysis confirmed that the Mn3+ and Mn2+ coexist in our samples. The room-temperature ferromagnetic behavior can be explained by double exchange. The ferromagnetism would be weakened by the nitrogen vacancies, which plays a role of donor.

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Section: Resultsmentioning

confidence: 68%

Section: Resultsmentioning

confidence: 98%

Intrinsic Ferromagnetism of the GaMnN Thin Films

Gao

Liu

et al. 2012

AMR

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“…Moreover, the peak position of the Mn 2p 3/2 centers at 641.85 eV for all films. Binding energy peaks of Mn 2p 3/2 at 642.3 and 641 eV are due to either trivalent or bivalent Mn ions . We believe that in our fabricated films, the Mn 2+ coexist with Mn 3+ valence states.…”

Section: Resultsmentioning

confidence: 79%

“…Binding energy peaks of Mn 2p 3/2 at 642.3 and 641 eV are due to either trivalent or bivalent Mn ions. [11] We believe that in our fabricated films, the Mn 2+ coexist with Mn 3+ valence states. The peak position of the Mn 2p 3/2 is the same for all films, indicating the O substituted N ion in GaN crystals did not cause the change of Mn valence state.…”

Section: X-ray Photoemission Spectroscopic Measurementmentioning

confidence: 90%

The effects of oxygen co‐doping on structural, magnetic and optical properties of Mn‐doped GaN

Hu¹,

Liu³

et al. 2013

Surface & Interface Analysis

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The GaMnN and GaMnN: O films were obtained by annealing at different NH3 flow rates. When the NH3 flow rate was decreased to 20 sccm, the oxygen was co‐doped into GaMnN film and substituted the few host atoms, which were confirmed by the X‐ray Photoelectron Spectra. Moreover, the oxygen co‐doping in GaMnN film drastically enhanced the gain of the ferromagnetic (FM) state but oxygen as shallow donor in GaN offers little carriers. Hence, the enhanced FM state is not due to increase of carrier concentration. On optical properties, the oxygen co‐doping in GaMnN film will suppress the blue luminescence centered near 2.8 eV and make a blue shift of the photoluminescence spectra. Copyright © 2013 John Wiley & Sons, Ltd.

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Influence of texture on the ferromagnetic properties of nanograined ZnO films

Straumal

Мазилкин

Protasova

et al. 2011

Physica Status Solidi (b)

104

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The pure ZnO thin films were deposited by the wet chemistry ('liquid ceramics') method from the butanoate precursors on the single-crystalline (102) sapphire substrates. The films annealed in air (550 8C, 24 h) after butanoate pyrolysis have pronounced texture, and they reveal the ferromagnetic behaviour. Argon annealed films (650 8C, 30 min) exhibit randomly oriented grains, where the ferromagnetism of these non-textured films is almost equal to that of bare substrate. In both cases the films consist of dense equiaxial nanograins with size 20 nm. We observed that grain boundaries (GBs) and related vacancies are the intrinsic origin for RT ferromagnetism in polycrystals [Straumal et al., Phys. Rev. B 79, 205206 (2009)]. Present results demonstrate that not only the specific area of GBs in nanograined ZnO alone determines the ferromagnetic behaviour of ZnO. The GB character distribution (i.e. GB misorientation and orientation) is different in the textured and non-textured films. Most probably, the GBs with different character possess also different magnetic properties. The role of GBs, free surfaces and interfaces in ferromagnetic behaviour of GaN is discussed. In particular, their presence permits to increase the Mn solubility in GaN without precipitation of secondary ferromagnetic phases.

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Characterizations of n-type ferromagnetic GaMnN thin film grown on GaN/Al2O3 (0001) by metal-organic chemical vapor deposition

Cited by 10 publications

References 27 publications

Intrinsic Ferromagnetism of the GaMnN Thin Films

Intrinsic Ferromagnetism of the GaMnN Thin Films

The effects of oxygen co‐doping on structural, magnetic and optical properties of Mn‐doped GaN

Influence of texture on the ferromagnetic properties of nanograined ZnO films

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