Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition

Onaya, Takashi; Nabatame, Toshihide; Sawamoto, Naomi; Ohi, Akihiko; Ikeda, Naoki; Nagata, T.; Ogura, Atsushi

doi:10.1016/j.mee.2019.111013

Cited by 64 publications

(84 citation statements)

References 46 publications

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“…Summary of P r and E c values as a function of annealing temperature for various fluorite-structure ferroelectrics based on previous reports. [7][8][9][10][11][12][13][14][15][16][17][18][19] The shaded area is within the temperature range required for BEOL integration or flexible electronic applications. The horizontal dashed line denotes the minimum switching charge density (over 12.0 μC cm À2 until 2020) required for FRAM applications by the IRDS.…”

Section: Doping Effects For Low-thermal-budget Ferroelectric Filmsmentioning

confidence: 99%

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Kim

Jung

et al. 2021

Physica Rapid Research Ltrs

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Since the first report on the unexpected ferroelectricity of fluorite-structure oxides in 2011, this topic has provided a pathway for new research directions and opportunities. Based on theoretical calculations and experimental demonstrations, it is now well known that fluorite-structure ferroelectrics are compatible with complementary metal-oxide-semiconductor technology and exhibit ferroelectric properties at extremely thin (<10 nm) thicknesses. It should be noted that the noncentrosymmetric orthorhombic phase, which is responsible for ferroelectric behavior, is formed even at low temperatures (400 C or less). Herein, the various factors such as doping effects, deposition method, annealing method and conditions, and substrate material are reviewed, focusing on thermal budget, especially the low-temperature annealing process for formation of the ferroelectric phase. These low-thermal-budget processes facilitate not only the integration of ferroelectric circuits in the back-end-of-line to increase the effective memory area and add more functionalities but also applications for flexible and wearable electronics.

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Section: Doping Effects For Low-thermal-budget Ferroelectric Filmsmentioning

confidence: 99%

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Kim

Jung

et al. 2021

Physica Rapid Research Ltrs

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“…It was shown that thin HZO films could be crystallized successfully in the desired FE phase by applying rapid thermal annealing (RTA) at 400 °C and even 300 °C for 30 or 60 s. Furthermore, phase transition kinetics were studied (at prior RTA crystallized films) during supplementary annealing at different temperatures and durations to simulate the thermal profile present during the formation of the interconnects, where high‐temperature processes (up to 400 °C) occur several times and last from some minutes to hours.…”

Section: Introductionmentioning

confidence: 99%

Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

Lehninger

Olivo

Ali

et al. 2020

Physica Status Solidi (a)

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The discovery of ferroelectricity in thin doped hafnium oxide films revived the interest in ferroelectric (FE) memory concepts. Zirconium‐doped hafnium oxide (HZO) crystallizes at low temperatures (e.g., 400 °C), which makes this material interesting for the implementation of FE functionalities into the back end of line (BEoL). So far, the FE phase of prior amorphous HZO films is achieved by using a dedicated rapit thermal annealing (RTA) treatment. However, herein, it is shown that this dedicated anneal is not needed. A sole furnace treatment given by the thermal budget present during the interconnect formation is sufficient to functionalize even ultrathin 5 nm HZO films. This result helps to optimize the integration sequence of HZO films (e.g., involving a minimum number of BEoL process steps), which saves process time and fabrication costs. Herein, metal–FE–metal capacitors with Hf0.5Zr0.5O2 films of different thicknesses (5–20 nm) are fabricated annealed at 400 °C for various durations within different types of ovens (RTA and furnace). Structural and electrical characterization confirms that all furnace‐annealed samples have similar X‐ray diffraction patterns, remanent polarization, endurances, and thickness dependencies as RTA‐annealed ones. With respect to remanent polarization, leakage current, and endurance, the HZO film of 10 nm thickness shows the most promising results for the integration into the BEoL.

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“…The proposed modeling framework was used to extract ferroelectric parameters for Al-doped 6,7 , Gd-doped 8 , La-doped 9 , Si-doped 1,[10][11][12] , Sr-doped 13 , Y-doped 14,15 , Zr-doped 4,10,[16][17][18][19][20][21][22][23][24][25][26] , and undoped 4,5 HfO 2 thin films reported in the literature as shown in Fig. 6.…”

Section: Discussionmentioning

confidence: 99%

“…Ferroelectric field-effect transistors (FeFETs), as emerging memory, find a niche in such applications due to their ultra-fast program/erase time, low operation voltage, and low power consumption [1][2][3] . Despite the fact that hafnium oxide 4,5 and its doped variants (Al-doped 6,7 , Gd-doped 8 , La-doped 9 , Si-doped 1,[10][11][12] , Sr-doped 13 , Y-doped 14,15 , Zr-doped 4,10,[16][17][18][19][20][21][22][23][24][25][26] ) have been extensively studied and characterized over the past few years, little has been done to aggregate those data into ferroelectric properties to provide the insight necessary to create a predictive model for ferroelectrics. Such a predictive model cannot be realized without the accurate determination of a multitude of ferroelectric parameters from various experimental hysteresis loops (Q FE -E FE ).…”

Section: Introductionmentioning

confidence: 99%

Extraction of Preisach Model Parameters for Fluorite-Structure Ferroelectrics and Antiferroelectrics

Wang

Hur

Tasneem

et al. 2021

Preprint

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Flourite-structure ferroelectrics (FEs) and antiferroelectrics (AFEs) such as HfO2 and its variants have gained copious attentionfrom the semiconductor community, because they enable complementary metal-oxide-semiconductor (CMOS)-compatible platforms for high-density, high-performance non-volatile and volatile memory technologies. While many individual experiments have been conducted to characterize and understand fluorite-structure FEs and AFEs, there has been little effort to aggregatethe information needed to benchmark and provide insights into their properties. We present a fast and robust modeling framework that automatically fits the Preisach model to the experimental polarization (QFE) vs. electric field (EFE) hysteresis characterizations of fluorite-structure FEs. The modifications to the original Preisach model allow the double hysteresis loops influorite-structure antiferroelectrics to be captured as well. By fitting the measured data reported in the literature, we observe that ferroelectric polarization and dielectric constant decrease as the coercive field rises in general.

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Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition

Cited by 64 publications

References 46 publications

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

Extraction of Preisach Model Parameters for Fluorite-Structure Ferroelectrics and Antiferroelectrics

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Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition

Cited by 64 publications

References 46 publications

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

Extraction of Preisach Model Parameters for Fluorite-Structure Ferroelectrics and Antiferroelectrics

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Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition