Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaO(x)-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 10(12). Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.
High-performance organic field-effect transistors (OFETs) based on polyelectrolyte gate dielectric and electrospun poly(3-hexylthiophene) (P3HT) nanofibers were fabricated on a flexible polymer substrate. The use of UV-crosslinked hydrogel including ionic liquids for the insulating layer enabled fast and large-area fabrication of transistor arrays. The P3HT nanofibers were directly deposited on the methacrylated polymer substrate. During UV irradiation through a patterned mask, the methacrylate groups formed covalent bonds with the patterned polyelectrolyte dielectric layer, which provides mechanical stability to the devices. The OFETs operate at voltages of less than 2 V. The average field-effect mobility and on/off ratio were approximately 2 cm(2)/(Vs) and 10(5), respectively.
A model which describes the bipolar resistive switching in transition-metal oxides is presented. To simulate the effect of switching, we modeled results of doping by oxygen vacancies along with variable Schottky barrier and resistor. The model simultaneously predicts three key features of experimental measurements: the rectifying behavior in high resistance states, abrupt switching, and the existence of bistable resistance states. Our model is based on modulation of Schottky barrier formed by variable resistance oxide layer at the metal-oxide interface. Experimental measurements of the Pt/ Ta 2 O 5 / TaO x / Pt structure matched very well with our nonvolatile resistive switching model.
Triboelectric nanogenerators with nature-replicated interface structures are presented. Effective contact areas of the triboelectric surfaces are largely enhanced because of the densely packed nano-in-micro hierarchical structures in nature. The enlarged contact area causes stronger triboelectric charge density, which results in output power increment. The interface engineering also allows the improved humidity resistance, which is an important parameter for the stable energy harvesting.
Highly stretchable conductive composite lines with an ordered zigzag structure are prepared. The high stretchability arises from the interpenetrating network between the polymer gel and Ag nanoparticles, as well as the ordered zigzag morphology. Double transfer of the structures in a perpendicular configuration allows for the fabrication of 2D stretchable electrodes.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.