Features of the operation of a bolometer based on a vanadium dioxide film in a temperature interval that includes a phase transition

Nonlinear Phenomena and Deterministic Chaos in Systems With Vanadium Dioxide

“…(scale) for Unfortunately, this method turns out to be not efficient because of the hysteresis effects [11] and also because of chaotic behavior for low thermal cycling rates [6]. The latter obstacle might nevertheless be avoided by, e.g., the singlepulse excitation [6], [12]. However, as shown in Section 3.B of the present paper, the effect of burst noise will affect negatively the device accuracy in this case.…”

“…As for the applied aspect, vanadium oxide films are used for fabrication of a variety of electrical and optical devices, including electrical switching elements, temperature sensors, optical storage devices, variable reflectivity mirrors, IR bolometric detectors [11]. The latter field of application is of especial interest [6], [11][12][13], because vanadium dioxide allows the designing of high-sensitive, spectrally broadband and uncooled bolometers. The study of noise and related phenomena in such devices is obviously an important problem from the viewpoint of the improvement of the bolometric sensor sensitivity and accuracy.…”

Sol-gel approaches to thermochromic vanadium dioxide coating for smart glazing application

“…VO 2 has received great attention for smart window application because of its ability to control solar heat gain [19]. Owing to its distinctive properties, VO 2 also offers potential for other technological uses, including IR bolometers [20,21], gas sensor [22,23], optical data storage and optical switching systems [24][25][26], flat panel display [27], electrode material in lithium batteries [28][29][30], and more recently in the terahertz range applications [31,32].…”

Ultra-thin filaments revealed by the dielectric response across the metal-insulator transition in VO2

“…Ultra-thin filaments revealed by the dielectric response across the metal-insulator transition in VO 2 (Received 3 October 2012; accepted 30 January 2013; published online 13 February 2013) Temperature dependent dielectric spectroscopy measurements on vanadium dioxide thin films allow us to distinguish between the resistive, capacitive, and inductive contributions to the impedance across the metal-insulator transition (MIT). We developed a single, universal, equivalent circuit model to describe the dielectric behavior above and below the MIT.…”

“…Since in many cases these transitions are first order, inhomogeneity and phase coexistence play a crucial role. [1][2][3] Since these may be the basis for novel electronic devices, a fundamental understanding of the transition mechanism and the concomitant changes in the dielectric properties are crucial to optimize device performance.…”