Ultra-thin filaments revealed by the dielectric response across the metal-insulator transition in VO2

“…15. Various versions of memory devices utilizing the effect of MIT in vanadium oxides has also been discussed in the literature [30], [31], [156], [162], [163], [171], [172]. It is pertinent to quote here also the work [173] where the experiments on memory switching in thin-film V 2 O 5 -based structures have first been described.…”

Section: Discussionmentioning

confidence: 99%

Oxide Electronics and Vanadium Dioxide Perspective: A Review

Pergament¹,

Стефанович²,

Velichko³

2013

Journal on Selected Topics in Nano Electronics and Computing

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-Metal-oxide-semiconductor field-effect transistors (MOSFET) have been for a long time the key elements of modern electronics industry. For the purpose of a permanent integration enhancement, the size of MOSFET has been decreasing exponentially for over decades in compliance with Moore's Law, but nowadays, owing to the intrinsic restrictions, the further scaling of MOSFET devices either encounters fundamental limits or demands for more and more sophisticated and expensive engineering solutions. Alternative approaches and device concepts are currently designed both in order to sustain an increase of the integration degree, and to improve the functionality and performance of electronic devices. Oxide electronics is one of such promising approaches which could enable and accelerate the development of information and computing technology. The behavior of delectrons in transition metal oxides is responsible for the unique properties of these materials, causing strong electronelectron correlations, which play an important role in the mechanism of metal-insulator transition. The Mott transition in vanadium dioxide is specifically the phenomenon that researchers consider as a corner stone of oxide electronics, particularly, in its special direction known as a Motttransition field-effect transistor (MTFET). This review focuses on current research, latest results, urgent problems and nearterm outlook of oxide electronics with special emphasis on the state of the art and recent progress in the field of VO 2 -based MTFETs.

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“…The impedance response from one specific area in a solid sample can be represented by an equivalent circuit element consisting of a parallel resistor-capacitor connection (RC element). 32,33 This RC element model can be understood intuitively: The application of a voltage stimulus to a solid sample leads to two instant and concurrent responses of the sample, i.e., dielectric polarization of localized charges and charge transport of mobile charge carriers. Considering the example of an RC element representing an insulating material, the capacitor describes the polarizability of the material and its ability to store charge, and the parallel resistor describes the sample's resistance that arises from the charge transport of mobile charge carriers that bypass or "escape" the ideal charge storage element.…”

Section: Impedance Spectroscopymentioning

confidence: 99%

Impedance spectroscopy of Al/AlN/n-Si metal-insulator-semiconductor (MIS) structures

Schmidt

Mayrhofer

Schmid

et al. 2019

Journal of Applied Physics

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In this work, a comprehensive characterization of metal-insulator-semiconductor structures by impedance spectroscopy is demonstrated for the case of electrically insulating, highly c-axis oriented, 600 nm sputter-deposited AlN films on n-Si substrates with Al top electrodes. Direct visual analysis and equivalent circuit fitting of the dielectric data were performed. For the latter procedure, the circuit model consisted of three series resistor-capacitor connection elements for the three dielectric contributions detected. The three contributions were identified as the AlN film, n-Si substrate, and an interface barrier effect. Several essential device parameters were determined separately, by visual or equivalent circuit fitting analysis, such as the dielectric permittivity of the AlN layer, the temperature dependence of the AlN permittivity, and the resistances of the AlN layer, the n-Si substrate, and the interface contribution. Furthermore, DC bias dependent impedance measurements allowed the identification of a Schottky-type interface barrier.

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Ultra-thin filaments revealed by the dielectric response across the metal-insulator transition in VO2

Abstract: Articles you may be interested inGeometric confinement effects on the metal-insulator transition temperature and stress relaxation in VO2 thin films grown on silicon

Cited by 28 publications

References 21 publications

Annealing temperature-dependent microstructure and electrical properties of Mn-based thin film thermistors with a sandwich structure

Annealing temperature-dependent microstructure and electrical properties of Mn-based thin film thermistors with a sandwich structure

Oxide Electronics and Vanadium Dioxide Perspective: A Review

Impedance spectroscopy of Al/AlN/n-Si metal-insulator-semiconductor (MIS) structures

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