Fast Switching $\beta$ -Ga<sub>2</sub>O<sub>3</sub>Power MOSFET With a Trench-Gate Structure

Dong, Hang; Long, Shibing; Sun, Haiding; Zhao, Xiaolong; He, Qiming; Qin, Yuan; Jian, Guangzhong; Zhou, Xuanze; Yu, Yangtong; Guo, Weican; Xiong, Wenjing; Hao, Weibing; Zhang, Ying; Xue, Huijun; Xiang, Xueqiang; Yu, Zhibin; Lv, Hangbing; Liu, Qi; Liu, Ming

doi:10.1109/led.2019.2926202

Cited by 51 publications

(36 citation statements)

References 26 publications

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“…5b), a rise time of 1.2 s and a decay time of 0.2 s are observed, respectively. Here, the rise time is defined as the time taken for the photocurrent to rise to 90% of its maximum value, and the fall time is defined in a similar way [41,42]. The multi-cycle time-dependent photoresponses of this device at different bias voltages are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Ultrawide-bandgap (6.14 eV) (AlGa)2O3/Ga2O3 heterostructure designed by lattice matching strategy for highly sensitive vacuum ultraviolet photodetection

Zhang

Jia

et al. 2021

Sci. China Mater.

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One judiciously designed strategy of utilizing an ultrathin but conductive Ga 2 O 3 :Si nanolayer to prepare (AlGa) 2 O 3 crystalline film is demonstrated. Benefiting from the existence of Ga 2 O 3 :Si nanolayer, a high-quality (Al 0.68 Ga 0.32 ) 2 O 3 sesquioxide film with 68 at.% aluminum was epitaxially grown on sapphire substrates, which was characterized by high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy and X-ray diffraction. Its bandgap was broadened to 6.14 eV, and a vacuum ultraviolet (VUV) (AlGa) 2 O 3 /Ga 2 O 3 :Si photodetector was subsequently fabricated. The detector exhibits a pretty high on-off ratio of about 10 3 , an open-circuit voltage of 1.0 V and a responsivity of 8.1 mA W −1 at 0 V bias voltage. The performances imply that the proposed strategy is valuable for improving the quality and also adjusting the bandgap of (AlGa) 2 O 3 sesquioxides, which is expected to facilitate their application in VUV photodetection.

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Section: Resultsmentioning

confidence: 99%

Ultrawide-bandgap (6.14 eV) (AlGa)2O3/Ga2O3 heterostructure designed by lattice matching strategy for highly sensitive vacuum ultraviolet photodetection

Zhang

Jia

et al. 2021

Sci. China Mater.

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“…Until recent years, β-Ga 2 O 3 has been attracting quite an attention from researchers, due to its promising semiconducting properties: temperature stability, optical transparencies, or photostability due to large energy bandgap, high breakdown electric (E)-field, and minimum leakage current. [1][2][3][4][5][6][7][8][9] Gallium trioxide is basically known to have five different polymorphisms, α, β, γ, δ, and ε. [10,11] Of these modifications monoclinic β-Ga 2 O 3 is the most stable form.…”

Section: Introductionmentioning

confidence: 99%

High Performance β‐Ga₂O₃ Schottky Barrier Transistors with Large Work Function TMD Gate of NbS₂ and TaS₂

Kim

Jin

Choi

et al. 2021

Adv Funct Materials

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Gallium trioxide, β-Ga 2 O 3 , has been recently studied due to its promising semiconducting properties as active material in transistors or Schottky diodes. Transistors with β-Ga 2 O 3 channels are mostly metal oxide field effect transistors (MOSFET), and they show very negative threshold voltages (V th ) in general. Metal semiconductor field effect transistors (MESFETs) with top gate are also reported with less negative V th . Still, β-Ga 2 O 3 MESFETs are only a few. Here, bottom gate architecture β-Ga 2 O 3 MESFETs using transition metal dichalcogenide (TMD) NbS 2 and TaS 2 are reported. Due to the large work functions of those metallic TMDs, the MESFETs display minimum subthreshold swing of 61 mV dec −1 , small V th of −1.2 V, minimum OFF I D of ≈100 fA, and maximum ON/OFF current ratio of ≈10 8 . Both β-Ga 2 O 3 Schottky diodes with TaS 2 and NbS 2 display good junction stability even after 300 °C measurements in 10 mTorr vacuum. When the β-Ga 2 O 3 MESFET with TaS 2gate is integrated as a switching FET into an organic light emitting diode (OLED) circuit, it demonstrates long-term leakage endurance performance, maintaining an OLED brightness higher than 58% of the initial intensity after 100 s passes since the ON-switching point, which is even superior to the performance of conventional a-IGZO MOSFET switch.

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“…Typically, the turn ON (t on ) time for each switch, including both Si and Ga 2 O 3 switches will be comprised in this period. The nominal value of dt is acquired from the manufacturer's datasheets for Si-based switches, whereas for Ga 2 O 3 , the information is obtained from [30]. The summary is demonstrated in Table 4.…”

Section: Performance Analysis Results and Discussion Of Hybrid Anpc Invertermentioning

confidence: 99%

“…In the proposed inverter, the complimentary operation of S 2 and S 3 at high switching frequency may result in the false turn-on of the switches [30]. Since Miller capacitance is present in all switches, the stored charge in it can cause the false turn ON of S 3 .…”

Section: Analysis Of Shoot Through Fault Protectionmentioning

confidence: 99%

A Hybrid Active Neutral Point Clamped Inverter Utilizing Si and Ga2O3 Semiconductors: Modelling and Performance Analysis

et al. 2021

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In this paper, the performance of an active neutral point clamped (ANPC) inverter is evaluated, which is developed utilizing both silicon (Si) and gallium trioxide (Ga2O3) devices. The hybridization of semiconductor devices is performed since the production volume and fabrication of ultra-wide bandgap (UWBG) semiconductors are still in the early-stage, and they are highly expensive. In the proposed ANPC topology, the Si devices are operated at a low switching frequency, while the Ga2O3 switches are operated at a higher switching frequency. The proposed ANPC mitigates the fault current in the switching devices which are prevalent in conventional ANPCs. The proposed ANPC is developed by applying a specified modulation technique and an intelligent switching arrangement, which has further improved its performance by optimizing the loss distribution among the Si/Ga2O3 devices and thus effectively increases the overall efficiency of the inverter. It profoundly reduces the common mode current stress on the switches and thus generates a lower common-mode voltage on the output. It can also operate at a broad range of power factors. The paper extensively analyzed the switching performance of UWBG semiconductor (Ga2O3) devices using double pulse testing (DPT) and proper simulation results. The proposed inverter reduced the fault current to 52 A and achieved a maximum efficiency of 99.1%.

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Fast Switching $\beta$ -Ga₂O₃Power MOSFET With a Trench-Gate Structure

Cited by 51 publications

References 26 publications

Ultrawide-bandgap (6.14 eV) (AlGa)2O3/Ga2O3 heterostructure designed by lattice matching strategy for highly sensitive vacuum ultraviolet photodetection

Ultrawide-bandgap (6.14 eV) (AlGa)2O3/Ga2O3 heterostructure designed by lattice matching strategy for highly sensitive vacuum ultraviolet photodetection

High Performance β‐Ga₂O₃ Schottky Barrier Transistors with Large Work Function TMD Gate of NbS₂ and TaS₂

A Hybrid Active Neutral Point Clamped Inverter Utilizing Si and Ga2O3 Semiconductors: Modelling and Performance Analysis

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Fast Switching $\beta$ -Ga2O3Power MOSFET With a Trench-Gate Structure

Cited by 51 publications

References 26 publications

Ultrawide-bandgap (6.14 eV) (AlGa)2O3/Ga2O3 heterostructure designed by lattice matching strategy for highly sensitive vacuum ultraviolet photodetection

Ultrawide-bandgap (6.14 eV) (AlGa)2O3/Ga2O3 heterostructure designed by lattice matching strategy for highly sensitive vacuum ultraviolet photodetection

High Performance β‐Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2

A Hybrid Active Neutral Point Clamped Inverter Utilizing Si and Ga2O3 Semiconductors: Modelling and Performance Analysis

Contact Info

Product

Resources

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Fast Switching $\beta$ -Ga₂O₃Power MOSFET With a Trench-Gate Structure

High Performance β‐Ga₂O₃ Schottky Barrier Transistors with Large Work Function TMD Gate of NbS₂ and TaS₂