A Hybrid Active Neutral Point Clamped Inverter Utilizing Si and Ga2O3 Semiconductors: Modelling and Performance Analysis

Abstract

In this paper, the performance of an active neutral point clamped (ANPC) inverter is evaluated, which is developed utilizing both silicon (Si) and gallium trioxide (Ga2O3) devices. The hybridization of semiconductor devices is performed since the production volume and fabrication of ultra-wide bandgap (UWBG) semiconductors are still in the early-stage, and they are highly expensive. In the proposed ANPC topology, the Si devices are operated at a low switching frequency, while the Ga2O3 switches are operated at a higher switching frequency. The proposed ANPC mitigates the fault current in the switching devices which are prevalent in conventional ANPCs. The proposed ANPC is developed by applying a specified modulation technique and an intelligent switching arrangement, which has further improved its performance by optimizing the loss distribution among the Si/Ga2O3 devices and thus effectively increases the overall efficiency of the inverter. It profoundly reduces the common mode current stress on the switches and thus generates a lower common-mode voltage on the output. It can also operate at a broad range of power factors. The paper extensively analyzed the switching performance of UWBG semiconductor (Ga2O3) devices using double pulse testing (DPT) and proper simulation results. The proposed inverter reduced the fault current to 52 A and achieved a maximum efficiency of 99.1%.

Design a clamp based active filter for the single stage voltage boost small power grid-connected system

“…We can calculate the values of R 3 and C 1 of carrier wave generator by using Eqs. (17)(18) as shown in Fig. 15.…”

“…Therefore, we cannot say it is a single-stage boost inverter. In the literature, a dynamic neutral point clamped (NPC) inverter constructed with cross switched and silicon gallium-trioxide device and one dimension SVPWM techniques are examined [17,18]. The outcome of later topology lowered the fault current to 52 A while maintaining a more than 99% efficiency [18].…”

“…In the literature, a dynamic neutral point clamped (NPC) inverter constructed with cross switched and silicon gallium-trioxide device and one dimension SVPWM techniques are examined [17,18]. The outcome of later topology lowered the fault current to 52 A while maintaining a more than 99% efficiency [18]. Similarly, two T-type inverters in [19] and adding zero sequences in PWM [20] are used to boost the voltage level.…”

Design Analysis of High-Power Level 4 Smart Charging Infrastructure Using Next-Generation Power Devices for EVs and Heavy Duty EVs

“…The charging level 4 mega power infrastructure is designed using ultra-widebandmaterial-based power devices. In this research, the gallium trioxide (Ga 2 O 3 ) material of the UWBG category is selected due to easy availability, cost-effectiveness, and technical maturity [23,24]. UWBG materials have better figure of merit (FOM) as compared to silicon and carbide technology [25,26].…”

An improved nested 3-phase 5-level MLI design with optimized output voltage and total harmonic distortion

“…Among those, the ANPC is created by merging the NPC and the FC in the method that does not involve the employment of clamping diodes. Nevertheless, its usefulness is limited because the FC voltage balancing process requires the use of extra sensors [15][16][17].…”